Projection optical system, exposure apparatus and device fabricating method

ABSTRACT

[PROBLEMS] It is the present invention to provide a projection optical system that can achieve compatibility between a desired resolution and a condition of arrangement, an exposure apparatus having the same, and a device fabrication method using the exposure apparatus.  
     [SOLVING MEANS] It is the present invention to provide a projection optical system having a numerical aperture NA of 0.23 or more at an image side, said projection optical system for projecting a pattern on an object surface onto an image surface in reduced size, said projection optical system includes six reflective surface that includes, in order of reflecting light from the object surface, a first reflective surface, a second reflective surface, a third reflective surface, a fourth reflective surface, a fifth reflective surface and a sixth reflective surface, and an aperture stop along an optical path between the first reflective surface and the second reflective surface, wherein Rsto/NA&lt;135 mm, where Rsto is a radius of the aperture stop.

TECHNICAL FIELD

The present invention relates generally to a projection optical system and an exposure apparatuse having the same, and more particularly to a catoptric projection optical system, an exposure apparatus, and a device fabricating method using the same. The catoptric projection optical system use ultraviolet (“UV”) and extreme ultraviolet (“EUV”) light to project and expose an object, such as a single crystal substrate for a semiconductor wafer, and a glass plate for a liquid crystal display (“LCD”).

BACKGROUND ART

Along with recent demands for smaller and lower profile electronic devices, finer semiconductor devices to be mounted onto these electronic devices have been increasingly demanded. Therefore, a reduction projection exposure apparatus using EUV light with a wavelength of 20 nm or less (for example, approximately 13.5 nm) shorter that of the ultraviolet (referred to as an “EUV exposure apparatus” hereinafter) has been developed from the demand of finer semiconductor devices. Since no applicable glass materials have been proposed for the EUV light as exposure light, it has thus been proposed to form a catoptric projection optical system only with mirrors (for example, multilayer mirror).

A mirror in a catoptric reduction projection optical system forms a multilayer coating to enhance reflected light and increase reflectance, but the smaller number of mirrors is desirable to increase reflectance of the entire optical system. Moreover, the projection optical system preferably uses the even number of mirrors to avoid mechanical interference between the mask and the wafer by arranging the mask and the wafer at opposite sides with respect to a pupil. In addition, a smaller critical dimension (or resolution) for the EUV exposure apparatus than a conventional one (for example, 32 nm node has been demanded presently) requires a large numerical aperture at image side (NA), while it is hard for the conventional 3 to 4 mirrors to decrease the wave aberration. For the increased degree of freedom in correcting the wave aberration, the increased number of mirrors is needed as well as making the mirrors aspheric. As a result, the projection optical system comes to require so many as six mirrors (while the instant application calls such an optical system a six-mirror system).

In the six-mirror system, an aperture stop are preferably arranged between a first reflective surface and a second refractive surface along with an optical path from an object surface. Generally, an effective diameter of a sixth reflective surface becomes very large to increase the NA, and it is necessary to greatly separate a fourth reflective surface from an optical axis to introduce the light to a fifth reflective surface without intercept at the sixth reflective surface. Then, if the aperture stop is arranged the optical path between the first reflective surface and the second reflective surface, the light can be introduced to the fourth reflective surface using two reflective surfaces (the second reflective surface and the third reflective surface), and freedom of design increases.

In addition, there is Patent References 1 to 11 as prior art.

[Patent Reference 1] Japanese Patent Application, Publication No. 2002-6221

[Patent Reference 2] U.S. Pat. No. 6,172,825

[Patent Reference 3] International Patent Publication No. WO 2002/056114

[Patent Reference 4] International Patent Publication No. WO 2002/48796

[Patent Reference 5] Japanese Patent Application, Publication No. 2004-138926

[Patent Reference 6] Japanese Patent Application, Publication No. 2004-138926

[Patent Reference 7] U.S. Pat. No. 5,815,310

[Patent Reference 8] U.S. Pat. No. 6,199,991

[Patent Reference 9] Japanese Patent Application, Publication No. 2000-235144

[Patent Reference 10] U.S. Patent Application No. 2003/0076483

[Patent Reference 11] U.S. Pat. No. 5,686,728

DISCLOSURE OF THE INVENTION Problems to be Solved by the Invention

It is necessary to partially enlarge the NA at image side of the projection optical system to achieve 32 nm node. Moreover, since it is necessary to arrange the aperture stop so that the light from the object surface to the first reflective surface, the light from the first reflective surface to the second reflective surface and the light from the second reflective surface to the third reflective surface are not intercepted and there are no mechanical interference with periphery members, a diameter of the aperture stop has an upper limit.

In addition, the size of effective part of the second to fourth reflective surfaces also becomes a problem. If the second and third reflective surface is too large, thickness increases and the problem of arrangement, such as intercept or interference of light, occurs. If the fourth reflective surface is too large, maximum effective diameter of the entire projection optical system increase and processing and measurement become difficult. On the other hand, if effective part of the second to fourth reflective surfaces is too small, an intermediate image is formed near the mirror, and an image performance easily deteriorates by transfer of a garbage on the mirror surface or deformation of the surface at processing.

The prior art is not enough about compatibility between the desired resolution (for example, 32 nm node) and the condition of arrangement.

Accordingly, it is an exemplified object of the present invention to provide a projection optical system that can achieve compatibility between a desired resolution and a condition of arrangement, an exposure apparatus having the same, and a device fabrication method using the exposure apparatus.

PROBLEMS TO BE SOLVED BY THE INVENTION

A projection optical system according one aspect of the present invention having a numerical aperture NA of 0.23 or more at an image side, said projection optical system for projecting a pattern on an object surface onto an image surface in reduced size, said projection optical system includes six reflective surface that includes, in order of reflecting light from the object surface, a first reflective surface, a second reflective surface, a third reflective surface, a fourth reflective surface, a fifth reflective surface and a sixth reflective surface, and an aperture stop along an optical path between the first reflective surface and the second reflective surface, wherein Rsto/NA<135 mm, where Rsto is a radius of the aperture stop.

A projection optical system according to another aspect of the present invention for projecting a pattern on an object surface onto an image surface in a reduced size, said projection optical system includes six reflective surfaces that include, in order of reflecting light from the object surface, a first reflective surface, a second reflective surface, a third reflective surface, a fourth reflective surface, a fifth reflective surface and a sixth reflective surface, and an aperture stop along an optical path between the first reflective surface and the second reflective surface, wherein a spread radius SCA/NA is equal to or larger than 70 mm and is equal to or smaller than 105 mm, where SCA is a half of a length in a direction along a perpendicular bisector of an area, which a light from a center object point of the arc illuminated area on the object surface illuminates the second, third and fourth reflective surface, and NA is a numerical aperture at an image side, wherein said predetermined plane is a plane that includes the center of the arc illuminated area and an optical axis.

The exposure apparatus having the above projection optical system constitute one aspect of the present invention. A device fabricating method includes the steps of exposing an object using the above exposure apparatus, and performing a predetermined process for the exposed object. Claims for a device fabricating method for performing operations similar to that of the above exposure apparatus cover devices as intermediate and final products. Such devices include semiconductor chips like an LSI and VLSI, CCDs, LCDs, magnetic sensors, thin film magnetic heads, and the like.

Other objects and further features of the present invention will become readily apparent from the following description of the preferred embodiments with reference to the accompanying drawings.

EFFECTS OF THE INVENTION

The present invention provides a projection optical system that can achieve compatibility between a desired resolution and a condition of arrangement, an exposure apparatus having the same, and a device fabrication method using the exposure apparatus.

EMBODIMENTS OF THE INVENTION

With reference to FIGS. 1 to 7, a description will be given of catoptric reduction projection optical systems 100 to 100F (reference number 100 generalizes these). The inventive catoptric reduction projection optical system is a catoptric reduction projection optical system for projects a pattern on an object surface MS (for example, a mask surface) onto an image surface W (for example, a surface of an object to be exposed, such as a substrate) in a reduced size, and is suitable for the EUV light (with a wavelength between 10 nm and 15 nm, more preferably between 13.4 nm and 13.5 nm).

The projection optical system 100 is a six-mirror system, which basically includes, in order of reflecting light from the object plane MS side, a first (concave) mirror M1, a second (convex) mirror M2, a third (convex) mirror M3, a fourth (concave) mirror M4, and a fifth (convex) mirror M5, and a sixth (concave) mirror M6. Thereby, the projection optical system 100 maintains a predetermined reflectance as the whole optical system, prevents a mechanical interference between the mask and the wafer, and increases a freedom of wave front aberration correction.

The present invention has a numerical aperture NA at the image side of 0.23 or more. In general, when the NA is 0.22 or less, 32 nm node is difficult to achieve in wave optical. On the other hand, Patent Reference 3 discloses the NA of 0.22, and indicated that a person with an ordinary skill in the art can increase the NA. However, if the NA is increased to 0.23 or more with the design value of Patent Reference 3, the interference occurs actually. Therefore, Patent Reference 3 cannot achieve the 32 nm node.

A line that connects each center of curvature in these six reflective surfaces of these six mirrors is referred to as an optical axis. However, the centers of curvatures in the six mirrors do not always align with a line, and it is conceivable that the center of curvature of a certain mirror offsets from the optical axis slightly (or within 1% or smaller of the mirror's radius of curvature) for purposes of aberrational corrections, etc. The mirror's center of curvature means a center of curvature of a spherical surface as a base of an aspheric surface if the mirror is not spherical but aspheric. Similarly, the mirror's radius of curvature means a radius of curvature of a spherical surface as a base of an aspheric surface if the mirror is not spherical but aspheric. In other words, the mirror's center of curvature means a center of curvature based on curvature near an axis of the reflective surface's rotation center (When the reflective surface is a spherical surface, all straight lines passed through the center of this spherical surface are the axis of the rotation center, and the axis of the reflective surface's rotation center may mean one of these axes. On the other hand, when the reflective surface is an aspheric surface, the axis of the reflective surface's rotation center means an axis of rotation center of an aspheric surface including the reflective surface, with rotational symmetry).

The aperture stop is located between the first reflective surface and the second reflective surface in the projection optical system. In general, the sixth reflective surface has an extremely large effective diameter for the higher NA, and the fourth reflective surface should be located apart from the optical axis to introduce to the fifth reflective surface without shielding of the light in the sixth reflective surface. Two reflective surfaces (the second reflective surface and the third reflective surface) can introduce the light to the fourth reflective surface by arranging the aperture stop to the optical path between the first reflective surface and the second reflective surface, and the design freedom increases.

In the projection optical system, an upper limit of a ratio (Rsto/NA) between a radius Rsto of the aperture stop and the numerical aperture NA at the image side is preferably 135 or less, and is more preferably 125.3 or less. If Rsto/NA is extremely large, the aperture stop shields the light from the object surface to the first reflective surface, the light from the first reflective surface to the second reflective surface and the light from the second reflective surface to the third reflective surface, or causes the mechanical interference with a surrounding component. In other hand, if Rsto/NA is extremely small, the first reflective surface should have a large power. If the first reflective surface has the large power, the aberration correction is difficult, and Rsto/NA has a lower limit. Although the lower limit is 120 or more until the NA is almost 0.32, the lower limit is 100 or more according to the further higher NA.

The instant embodiment sets the effective part of the second to the fourth reflective surfaces to an appropriate range. If the second and the third reflective surfaces are extremely large, a thickness becomes thin, and the problem of arrangement such as the shielding of the light and the interference is caused. If the fourth reflective surface is extremely large, the maximum effective diameter of the whole projection optical system becomes large, and processing and measurement are difficult. On the other hand, if he effective part of the second to the fourth reflective surfaces are extremely small, the intermediate image is formed near the mirror, and the imaging performance easily deteriorates by the dust of the mirror surface transfers and mirror's deformations.

The instant embodiment introduces a ratio SCA/NA between a radius SCA of an irradiation area that a light from an object point in a center of the arc illuminated area on the object surface spreads to each of the second to the fourth reflective surface in a predetermined plane and the numerical aperture NA at the image side to evaluate the effective parts of the second to the fourth reflective surfaces. Referring to FIGS. 12(a) to 12(c), a description will be given of the evaluation of the effective parts of the second to the fourth reflective surface. Here, FIG. 12(a) is an optical-path diagram of the inventive projection optical system, FIG. 12(b) is a schematic perspective view for explaining the arc illuminated area on the object surface, and FIG. 12(c) is an enlarged plane view of the arc illuminated area.

Referring to FIG. 12(a) to 12(c), the arc illuminated area AIR on the object surface MS is an area that an arc AC passed, when the arc AC moves only a predetermined distance D in parallel among a perpendicular bisector PB of a chord C shown in FIG. 12(b) by a dotted line. Moreover, a center B of the arc illuminated area AIR is an intersecting point formed between an area that the arc AC passed, when the arc AC moves only a predetermined distance D/2 along the perpendicular bisector PB of the chord C and the perpendicular bisector PB (in other words, the intersecting point formed between the principal ray and the reflective surface (an incident point of the principal ray to the reflective surface)). XYZ coordinates are set as shown in FIG. 12(b), the perpendicular bisector PB is set to correspond to Y axis, the center of curvature of the arc AC is set an origin O, and a coordinate crossed Y axis of the bottom side arc AC of the illuminated area AIR. In this case, a coordinate of the center B is (0, R+D/2, 0). In other words, the center B is a midpoint of line segment crossed between a predetermined plane P and the illuminated area AIR in the predetermined plane P that includes a center of gravity G or the origin O and the optical axis AX (a plane that includes the perpendicular bisector PB and the optical axis AX shown in FIG. 12(a) by paper plane or YZ plane shown in FIG. 12(b)).

A spread radius on each of reflective surface is defined as the irradiation area formed on each reflective surface by the light from the center B. More specifically, the spread radius is a half of difference between a distance between a most distant position from the optical axis AX on the plane shown in FIG. 12(a) among the irradiation area and the optical axis AX and a distance between a most close position from the optical axis AX on the plane shown in FIG. 12(a) among the irradiation area and the optical axis AX. In other words, in FIG. 12(a), half of lengths SCA2, SCA3 and SCA4 orthogonal-projected each irradiation area to Y axis are respectively spread radiuses on the second reflective surface to the fourth reflective surface. FIG. 12(a) shows diameters 2SCA2, 2SCA3 and 2SCA4. In the instant embodiment, all of SCA2, SCA3 and SCA4 are larger than 70 and smaller than 105. Especially, SCA2/NA is preferably value that is larger than 94 mm and smaller than 105 mm and is more preferably a value that is larger than 100 mm and smaller than 105 mm. SCA3/NA is preferably value that is larger than 72 mm and smaller than 84 mm and is more preferably a value that is larger than 78.5 mm and smaller than 84 mm. SCA4/NA is preferably value that is larger than 75 mm and smaller than 98 mm and is more preferably a value that is larger than 89 mm and smaller than 98.5 mm.

As above-mentioned, when the light is introduced from the object surface to the fourth reflective surface apart from the optical path to increase the NA, the light should not be deflected at a rapidly angle (deflection means that the light changes a traveling direction by the reflective surface) to reduce the aberration and prevents the reductions of the reflectance due to the multilayer coating. Therefore, it is important that a distance between the object point and the effective area of first reflective surface in a direction perpendicular to the optical axis, a distance between the first reflective surface and the effective area of second reflective surface in the direction perpendicular to the optical axis and a distance between the second reflective surface and the effective area of the third reflective surface in the direction perpendicular to the optical axis and a distance between the third reflective surface and the effective area of the fourth reflective surface in the direction perpendicular to the optical axis are not extremely different value, and a surface apex interval between the first reflective surface and the second reflective surface, a surface apex interval between the second reflective surface and the third reflective surface and a surface apex interval between the third reflective surface and the fourth reflective surface are not extremely short.

Referring to FIG. 13, a description will be given of the light from the object point to the fourth reflective surface. Here, FIGS. 13(a) and 13(b) are optical-path diagrams of the projection optical system 100. Intersecting points formed between a principal ray from the object point on the center B of the illuminated area AIR (a center line shown in FIG. 13(a)) and the first to the fourth reflective surface are respectively denoted by first to fourth intersecting points S1 to S4. A distance projected the object point and the first nodal pont S1 in Y axis direction perpendicular to the optical axis (Z axis direction) is denoted by La1. A distance projected the first intersecting point S1 and the second intersecting point S2 in Y axis direction is denoted by La2. A distance projected the second intersecting point S2 and the third intersecting point S3 in Y axis direction is denoted by La3. A distance projected the third intersecting point S3 and the fourth intersecting point S4 in Y axis direction is denoted by La4. Then, in the inventive projection optical system, a value of maximum value/minimum value among La1 to La4 is 2.2 or less. Moreover, in the projection optical system 100, the value of maximum value/minimum value is preferably 2.0 or more, and is more preferably 2.06 or more. Thereby, the projection optical system 100 can effectively prevent the mechanical interference and shielding of the light.

Next, referring to FIG. 13(b), a surface apex is defined as one of intersecting points formed between the optical axis and an approximately spherical surface, which one is closest to a reflection point of the light, the approximately spherical surface having a center that is defined as a center of curvature of the first to the fourth reflective surface, and a radius that is defined as a radius of curvature of the first to the fourth reflective surface, an interval between the surface apex of the first reflective surface and the surface apex of the second surface is denoted by Lb1, an interval between the surface apex of the second reflective surface and the surface apex of the third reflective surface is denoted by Lb2, and an interval between the surface apex of the third reflective surface and the surface apex of the fourth reflective surface is denoted by Lb3. In the projection optical system 100, a value of maximum value/minimum value is 2.0 or less among Lb1 to Lb3.

Especially, the projection optical system 100 has a ratio between a paraxial radius of curvature r2 of the second reflective surface and an object-image distance TT and a ratio between a paraxial radius of curvature r3 of the third reflective surface and the object-image distance TT so that the second reflective surface and the third reflective surface do not rapidly deflect the light as shown below. 0.52<|r2/TT|<0.63  [Formula 1] 0.26<|r3/TT|<0.35  [Formula 2]

More specifically, in the formula 1, if |r2/TT| is 0.52 or more, the light can be deflected in a fourth reflective surface direction without rapidly deflecting the light. If |r2/TT| is not 0.63 or less, the second reflective surface extremely approaches the plane, and a processing accuracy cannot maintain. In the formula 2, if |r3/TT| is 0.26 or more, the light can be deflected in a fourth reflective surface direction without rapidly deflecting the light. If |r3/TT| is 0.35 or less, the fourth reflective surface is further separated from the optical axis, and the high NA can be maintained.

Moreover, the inventive projection optical system has a ratio between a paraxial radius of curvature r1 of the first reflective surface and the object-image distance TT, a ratio between a paraxial radius of curvature r4 of the fourth reflective surface and the object-image distance TT, and a ratio between a paraxial radius of curvature r2 of the second reflective surface and the object-image distance TT as shown below. 0.26<|r1/TT|<0.29  [Formula 3] 0.23<|r4/TT|<0.27  [Formula 4] 0.11<|r5/TT|<0.14  [Formula 5] 0.17<|r6/TT|<0.2  [Formula 6]

In the formula 1 to 6, a lower limit of above ratios prevents the rapidly deflection of the light. An upper limit of the formula 3 introduces the light to the fourth reflective surface. An upper limit of the formula 4 separates maintains the high NA by further separating the fourth reflective surface from the optical path and decrease the maximum effective diameter of the projection optical system. Upper limit of the formula 5 and the formula 6 prevent the shielding of the light and the mechanical interference.

The incident angle is preferably smaller than 28° to obtain high reflectance of a multilayer coating, and the incident angle is preferably gradually large in order of M2, M3 from M1 to reduce the aberration without rapidly deflecting the light.

Preferably, 1.5<A1<1.6 and 2.3<B1<2.5 are met, where θ11 is an incident angle to a surface normal of the first reflective surface, θ21 is an incident angle to a surface normal of the second reflective surface, and θ31 is an incident angle to a surface normal of the third reflective surface, in the principal ray of the light from the center B, and A1 is θ21/θ11 and B1 is θ31/θ11. If less than a lower limit of this condition, the incident angle becomes extremely small, the light cannot be introduced to a position apart from the optical axis, and the effective parts of each mirror and the aperture stop overlap. On the other hand, if this condition exceeds an upper limit, the reflectance cannot be obtained due to a property of the multilayer coating. Preferably, 2.4<A2<2.7 and 2.8<B2<3.2 are met from the same reason, where θ12 is an incident angle to the optical axis of the first reflective surface, θ22 is an incident angle to an optical axis of the second reflective surface, and θ32 is an incident angle to an optical axis of the third reflective surface, in the principal ray of the light from the center B, and A2 is θ22/θ12 and B2 is θ32/θ12.

In the principal ray of the light from the center B, the incident angle θ11 to the surface normal of the first reflective surface, the incident angle θ21 to the surface normal of the second reflective surface and the incident angle θ31 to the surface normal of the third reflective surface are preferably conditions as shown below. 9°<θ11<12°  [Formula 7] 14.5°<θ21<18.5°  [Formula 8] 23.5°<θ31<28°  [Formula 9] θ11<θ21<θ31  [Formula 10]

In the principal ray of the light from the center B, an incident angle θ41 to a surface normal of the fourth reflective surface, an incident angle θ51 to a surface normal of the fifth reflective surface and an incident angle θ61 to a surface normal of the sixth reflective surface are preferably conditions as shown below. 7.5°<θ41<10°  [Formula 11] 10.5°<θ51<13.5°  [Formula 12] 3°<θ61<5.5°  [Formula 13]

In the principal ray of the light from the center B, the incident angle θ12 to the optical axis of the first reflective surface, the incident angle θ22 to the optical axis of the second reflective surface and the incident angle θ32 to the optical axis of the third reflective surface are preferably conditions as shown below. 4.5°<θ12<7°  [Formula 14] 13.5°<θ22<17°  [Formula 15] 15.5°<θ32<20°  [Formula 16] θ12<θ22<θ32  [Formula 17]

In the principal ray of the light from the center B, an incident angle θ42 to an optical axis of the fourth reflective surface, an incident angle θ52 to an optical axis of the fifth reflective surface and an incident angle θ62 to an optical axis of the sixth reflective surface are preferably conditions as shown below. 31.5°<θ42<35°  [Formula 18] 14.5°<θ52<18.5°  [Formula 19] 6.5°<θ62<9.5°  [Formula 20]

In addition, if surface intervals are condition as shown bellow, the reflection of light and the arrangement of components can be facilitated. An absolute value Le1 of the surface apex interval between the first reflective surface and the second reflective surface on the optical axis is preferably larger than an absolute value Le2 of the surface apex interval between the second reflective surface and the third reflective surface on the optical axis, an absolute value Le3 of the surface apex interval between the third reflective surface and the fourth reflective surface on the optical axis. When Le1 is larger than Le2, the arrangement position of the third reflective surface closes the sixth reflective surface, and the arrangement of the components are difficult. Moreover, when Le2 is smaller than Le1, Le3 is preferably smaller than Le1. If Le3 is larger than Le1, the arrangement position of the fourth reflective surface is near the object surface, and arrangement of the mask stage and a raising mirror illumination system etc. becomes difficult. Therefore, Le1, Le2 and Le3 are preferably conditions as shown bellow. 0.25<Le1/TT<0.285  [Formula 21] 0.175<Le2/TT<0.21  [Formula 22] 0.21<Le1/TT<0.235  [Formula 23]

An absolute value TT of the surface apex interval between the object surface and the image surface on the optical axis, an absolute value Le0 of the surface apex interval between the object surface and the first reflective surface on the optical axis, an absolute value Le4 of the surface apex interval between the fourth reflective surface and the fifth reflective surface on the optical axis, an absolute value Le5 of the surface apex interval between the fifth reflective surface and the six the reflective surface on the optical axis and an absolute value Le6 of the surface apex interval between the sixth reflective surface and the image surface on the optical axis are preferably conditions as shown bellow. 0.555<Le0/TT<0.575  [Formula 24] 0.685<Le4/TT<0.72  [Formula 25] 0.295<Le5/TT<0.315  [Formula 26] 0.33<Le6/TT<0.35  [Formula 27]

An optical path of the light from a reticle's pattern surface (object surface) to the image surface is configured so that an optical path from the second reflective surface to the third reflective surface does not intersect with an optical path from the fourth reflective surface to the fifth reflective surface. Therefore, a complex arrangement of optical elements and two or more surfaces with large effective diameter can be avoided. This prevents an optical path from being so complex that it is difficult to arrange members, or two surface surfaces or more each having a large effective diameter from existing.

For easy processing and measurements, an absolute value of a radius of curvature of the second reflective surface is made 1800 mm or smaller, more preferably 1600 mm or smaller.

An intermediate image is formed between the fourth and fifth reflective surfaces. This configuration narrows the light near the sixth reflective surface having a large effective diameter, and effectively prevents light shielding. An intermediate image of the pattern is formed at a position that accords with none of the six reflective surfaces. An intermediate image of the pattern on the object surface is formed between two adjacent reflective surfaces along the optical path of the light among the six reflective surfaces, and the intermediate image is located apart from each of the two adjacent reflective surfaces by Lim×0.35 or greater, more preferably, Lim×0.4 or greater, where Lim is an optical path length between the two adjacent reflective surfaces. This configuration can maintain an appropriate divergence of the light on the reflective surface, and reduce deteriorations of imaging performance on the reflective surface, caused by dust and ripples, bubbles in the mirror material, etc.

The light from the object surface MS to the first mirror M1 is non-telecentric, and the exit light at the image surface side is telecentric. Since an additionally provided illumination optical system illuminates the reflection mask on the object surface MS, a certain incident angle is vital at the object side. On the other hand, the image surface side is preferably telecentric to reduce magnification variance even when the wafer W arranged on the image surface moves along the optical axis direction.

The projection optical system 100 is arranged substantially as a coaxial optical system that is axially symmetrical around one optical axis, has an advantage in that an aberration is corrected for only an arc-shape image field around the optical axis. However, the six mirrors in the catoptric reduction projection optical system do not have to be arranged perfectly coaxial for aberrational corrections or adjustments. For example, they may slightly decenter for aberrational improvements or improve the degree of freedom in arrangement.

Preferably, the fifth and sixth mirrors (M5) and (M6) are convex and concave mirrors, respectively, for imaging with high NA and maintained back focus. Here, the “back focus” means an interval between the surface closest to the image surface and the image surface (W). It is preferable that the first reflective surface has a concave shape for convergence of the divergent light from the mask, therefore it is easy to guide the light from the mask to the wafer. It is also preferable that the fourth reflective surface has a concave shape, so as to introduce the light into the fifth reflective surface close to the optical axis and avoid the sixth reflective surface having a large effective diameter. All of the optical elements having a power is located between the object surface and the image surface.

The aperture stop is located between the first and second reflective surfaces, and the second reflective surface and the third reflective surface have a convex shape. This configuration can introduce the light to the fourth reflective surface via two reflective surfaces, i.e., the second and third reflective surfaces, when attempting to introduce the light from the aperture stop to the fourth reflective surface, preventing an extremely great distance between the third and fourth reflective surfaces. This provides a system that has a relatively small maximum effective diameter, and can reduce the enlargement of the fourth reflective surface while keeping the incident angle small. Moreover, the properly enlarged front focus (that is a distance from the object surface to the fourth reflective surface in the instant embodiment) facilitates an arrangement of optical elements.

In order to form a system having a comparatively small incident angle, a comparatively small maximum effective diameter, and a sufficient front focus, it is preferable that L1 and L2 satisfy the following formula, where L1 is an interval between the object surface and the reflective surface closest to the object surface (which is, but not limited to, a distance between the object surface and the fourth reflective surface in the instant embodiment, and may be a distance between the object surface and the second reflective surface or a distance between the object surface and the reflective surface other than the second and fourth reflective surfaces), and L2 is an interval between the reflective surface closest to the object surface and the first reflective surface. 0.75<L1/L2<1.25  [Formula 28]

More preferably, 0.80<L1/L2<1.20  [Formula 29]

may be satisfied.

In addition, it is further preferably so that a next condition is satisfied. 0.81<L1/L2<0.84  [Formula 30]

Or 0.87<L1/L2<0.94  [Formula 31]

A small telecentricity at the object side is needed to eliminate a problem of deteriorations of imaging performance caused by influence of the oblique incidence upon the reticle. In this case, when the second reflective surface accords with the aperture stop surface, the light incident upon the first reflective surface from the object surface is shielded on the second reflective surface. The projection optical system 100 arranges the stop between the first and second reflective surfaces, and prevents the above problem.

Disadvantageously, when the divergence of the light on the reflective surface is small, the ripples on the mirror surface that occur at the time of processing and the air bubbles in the mirror materials directly affect the deteriorations of the imaging performance. In addition, the energy concentration deforms a mirror and transfers dust. As one solution for this problem, it is preferable that a difference is 30 mm or longer, more preferably, 40 mm or above (although an extremely great value makes a processing measurement impossible), between a maximum distance and a minimum distance between an optical axis and a light incident area on the fourth reflective surface, upon which light emitted from a center of a nodal line is incident, the nodal line being formed between a plane that includes a center of an arc illuminated area (i.e., a center of gravity or a center point on the center line in a circumference direction of the arc shape) on the object surface and the optical axis, and the illuminated area. While the instant system relatively reduces a distance between the third and fourth reflective surfaces as discussed above and narrows the divergent light on the fourth reflective surface, the convex shapes of the second and third reflective surfaces enable properly spread light to be incident upon each reflective surface and maintains an appropriate divergence of the light on the fourth reflective surface.

Where r1 to r6 are radii of curvature of respective mirrors, the sum of Petzval terms should be zero or nearly zero as in formulas below: $\begin{matrix} {{\frac{1}{r_{1}} - \frac{1}{r_{2}} + \frac{1}{r_{3}} - \frac{1}{r_{4}} + \frac{1}{r_{5}} - \frac{1}{r_{6}}} \approx 0} & \left\lbrack {{Formula}\quad 32} \right\rbrack \\ {{\frac{1}{r_{1}} - \frac{1}{r_{2}} + \frac{1}{r_{3}} - \frac{1}{r_{4}} + \frac{1}{r_{5}} - \frac{1}{r_{6}}} = 0} & \left\lbrack {{Formula}\quad 33} \right\rbrack \end{matrix}$

While the inventive catoptric reduction projection optical system includes six mirrors, at least one or more mirrors may have an aspheric surface. Formula 34 defines a general aspheric shape. As a mirror having an aspheric surface advantageously facilitates a correction of aberration, the aspheric surface is preferably applied to many possible (desirably, six) mirrors. $\begin{matrix} \begin{matrix} {Z = {\frac{{ch}^{2}}{1 + \sqrt{1 - {\left( {1 + k} \right)c^{2}h^{2}}}} + {A\quad h^{4}} + {Bh}^{6} + {Ch}^{8} +}} \\ {{Dh}^{10} + {Eh}^{12} + {Fh}^{14} + {Gh}^{16} + {Hh}^{18} + {Jh}^{20} + \cdots} \end{matrix} & \left\lbrack {{Formula}\quad 24} \right\rbrack \end{matrix}$

In the formula 34, “Z” is a coordinate in an optical-axis direction, c is a curvature (i.e., a reciprocal number of the radius r of curvature), “h” is a height from the optical axis, “k” a conic constant, “A” to “J” are aspheric coefficients of 4^(th) order, 6^(th) order, 8^(th) order, 10^(th) order, 12^(th) order, 14^(th) order, 16^(th) order, 18^(th) order, 20^(th) order, respectively.

A multilayer coating for reflecting the SW light is applied to the respective mirrors, and intensifies the light. An applicable multilayer for reflecting the EUV light below 20 nm is, for example, a Mo/Si multilayer coating created by reciprocally laminating a molybdenum (Mo) layer and a silicon (Si) layer or a Mo/Be multilayer coating created by reciprocally laminating a molybdenum (Mo) layer and a beryllium (Be) layer. An optimal material is selected according to wavelengths to be used. Of course, the present invention does not limit the multilayer coating to the above materials, and may use any multilayer coating that has an operation or effect similar to that of the above.

In general, in view of the characteristics of the multilayer coating, a relatively small distribution width of an incident angle is needed to increase the reflectance when the maximum value of the incident angle is large, although a relatively large distribution width of an incident angle is permissible when the maximum value of the incident angle is small. It is the third surface that has the largest incident angle among the six reflective surfaces in the instant system. This third reflective surface is likely to reduce the reflectance irrespective of a relatively small incident angle. Considering the characteristics of the multilayer coating, the projection optical system 100 prevents the deterioration of the performance by requiring the incident angle characteristic upon the third reflective surface to satisfy the following the following formula. Here, θ_(max) is a maximum incident angle upon the third reflective surface, and Δθ is a difference between the maximum incident angle and the minimum incident angle on the third reflective surface, or an incident angle distribution width. 25°<θ_(max)+Δθ<35°  [Formula 35] 28°<θ_(max)+Δθ  [Formula 36]

and/or θ_(max)+Δθ<32°  [Formula 37]

More preferably, θ_(max)+Δθ<30°  [Formula 38]

None of the six reflective surfaces have an area that allows the light to pass through, absorbs the light or transmits the light, in their light incident areas. In one embodiment, the light incident area on each reflective surface does not have an opening, etc. With respect to the light to the object to be exposed (i.e., a wafer), or the light from the sixth reflective surface to the object (image surface), an area that does not include the light is eliminated from an outer circumference on a section orthogonal to the optical axis. In general, when a pupil is shielded, the imaging performance is remarkably affected.

The convergent light enters the convex third reflective surface from the second reflective surface, and the divergent light enters the fourth reflective surface from the convex third reflective surface. The instant embodiment provides such characteristics that the maximum incident angle in a light incident effective area at respective points in a radial direction (orthogonal to the optical axis) on the third reflective surface has a maximum value at the effective region, thereby making the incident angle distribution width relatively small and preventing deteriorations of the performance of the multilayer coating. More specifically, on the third reflective surface, there is an extreme of a maximum incident angle at each point on a nodal line in a region between Lmin+0.3×(Lmax−Lmin) and Lmax on the nodal line, the nodal line being formed between a light incident area upon which the light from an arc illuminated area on the object surface is incident, and a plane that includes a center point of a chord of the arc illuminated area shape on the object surface and an optical axis, the light incident area being located on one of the six reflective surfaces, which one has the largest maximum value of a light incident angle, where Lmin is a minimum distance from the optical axis to each point on the nodal line, and Lmax is a maximum distance from the optical axis to each point on the nodal line. It is more preferable that the maximum incident angle at each point has an extreme value on the nodal line in a region between (Lmin+Lmin)/2±0.2×(Lmax−Lmin) on the nodal line.

A surface apex is defined, with respect to each of the six reflective surfaces, as one of intersecting points between an optical axis and an approximately spherical surface, which one is closest to a reflection point of the light on each of the six reflective surfaces, the approximately spherical surface having a center that is defined as a center of curvature of each of the six reflective surfaces, and a radius that is defined as a radius of curvature of each of the six reflective surfaces, wherein the surface apexes of the six reflective surfaces are arranged in order of the fourth reflective surface, the second reflective surface, the third reflective surface, the first reflective surface, the sixth reflective surface and the fifth reflective surface in order from the object surface to the image surface along an optical axis.

When the surface interval becomes small, it is difficult to thicken the mirror and to arrange members, such as a holding mechanism and a cooling mechanism. Considering this fact, a distance is 250 mm or longer, more preferably 310 mm or longer, between the object surface and one of the surface apexes of the six reflective surfaces, which one is the closest to the object surface. A distance along the optical axis between the surface apex of the second reflective surface and the surface apex of the fourth reflective surface is 5 mm or longer, preferably 10 mm or longer, more preferably 15 mm or longer. In addition, if a distance between the object surface and the image surface on the optical axis is L11, an interval L24 between the surface apex of the second reflective surface and the surface apex of the fourth reflective surface preferably satisfies the following formula. La11/200<L24<La11/10  [Formula 39]

Here, more preferably, La11/100<L24  [Formula 40]

and/or L24<La11/18  [Formula 41]

In general, the sixth reflective surface having a large effective diameter has a large thickness. Therefore, an interval between the surface apex of the sixth reflective surface and the surface apex of the reflective surface closest to the sixth reflective surface along the optical axis is 100 mm or longer, preferably 110 mm or longer, 115 mm or longer. The instant system satisfies the above conditions and provides an easily configured system.

If an overall length of the projection optical system is La11, it is preferable to satisfy the following condition. In other words, if an interval between the surface apex of the sixth reflective surface and the surface apex of the reflective surface that is closest to the sixth reflective surface is L6, the following condition is satisfied. La11/20<L6<La11/6  [Formula 42] La11/12<L6  [Formula 43]

and/or L6<La11/9  [Formula 44]

Preferably, the surface apex of the third reflective surface exists at the object side rather than the apex surface of the sixth reflective surface. Preferably, the third reflective surface is located closer to the object surface along the optical path than the sixth reflective surface. The aperture stop is located closer to the second reflective surface among the six surfaces on a distance along with the optical path.

Preferably, the aperture stop is located between the first and second reflective surfaces, and located apart from each of the first and second reflective surfaces by Lst/10 or greater, more preferably, by Lst/5 or greater, where Lst is an optical path length between the first and second reflective surfaces. This configuration can take advantage of the second reflective surface as means for introducing the light into the fourth reflective surface that is located apart from the optical axis.

The throughput improves to extend a width of the arc illuminated area. In present light source required specification, when the NA of projection optical system is 0.2 to 0.4, the arc illuminated area needs the width W of 3.5 mm or more to effectively use the light from the light source. However, if the width is extremely large, the aberration correction of the projection optical system becomes difficult. Therefore, the width is preferably 8 mm or less, and is more preferably 4 mm or more and 6 mm or less. In addition, NA and the width W of the arc illuminated area are preferably condition as shown bellow. NA>0.36/(W+1.5)+0.165  [Formula 45]

A description will be given of the projection optical system 100 with reference to FIGS. 1 to 10.

First Embodiment

A description will be given of a first embodiment of the present invention with reference to FIG. 1 and Table 1. A catoptric projection optical system 100 of the first embodiment includes six mirrors that includes, in order of reflecting the light from the object surface MS, a first reflective surface (concave) M1, a second reflective surface (convex) M2, a third reflective surface (convex) M3, a fourth reflective surface (concave), a fifth reflective surface (convex) M5 and a sixth reflective surface (concave) M6. The catoptric projection optical system 100 forms an intermediate image IM between M4 and M5 along the optical path, and re-forms the intermediate image IM on the image surface W using the remaining surfaces. Units of a radius of curvature and a surface interval shown in Table 1 are [mm]. In FIG. 1, an alternate long and short dash line is an optical axis, and is a line that connects each center of curvature of the first to the sixth reflective surface.

A distance between the object surface and the image surface along the optical axis (overall length) is about 1252.384 in the first embodiment. MS is a reflection mask located at an object surface position, and W is a wafer located at an image surface position. The inventive catoptric reduction projection optical system projects the reflection mask illuminated by the illumination optical system onto the wafer as the image surface. A numerical aperture NA at the image side is 0.25, a magnification is ¼, and an object point is 119 to 139 mm (while the image side has an arc field with a width of 5 mm). The wave front aberration has a RMS of 7.2 mλ, and a static distortion range of 2.7 nm.

An arrangement of the aperture stop between M1 and M2 prevents shielding of the light from the object surface to M1, although the object-side telecentricity is as small as 103 mrad. Since M2 and M3 introduce the light from the aperture stop to M4 apart from the optical axis, a distance between M3 and M4 can be relatively short although the maximum incident angle is maintained to be 27°. This distance and second reflective surface M2 having a convex shape provide an appropriate divergence of the light on the fourth reflective surface M4.

More specifically, the divergence of the light on the fourth reflective surface introduced from the object point of 129 mm is 45.2 mm. This configuration reduces influences of the mirror surface's ripples, air bubbles in the mirror material, mirror's deformations, dust transfers, etc., and prevent deteriorations of the imaging performance. Moreover, the maximum effective diameter is maintained to be 585 mm.

Preferably, the aperture stop is located apart from the first reflective surface M1 and second reflective surface M2 by a proper distance. In the instant embodiment, the aperture stop is located apart from the first reflective surface M1 by 0.654 Lst, and apart from the second reflective surface M2 by 0.346 Lst, where Lst is the optical axis length between the first reflective surface M1 and second reflective surface M2.

The third reflective surface M3 is a surface that has the largest light incident angle among the six reflective surfaces, which is 27°. The incident angle distribution width is 4.4°. The small incident angle distribution prevents reductions of the reflectance due to the multilayer coating.

A distance is 321.9 mm between the object surface and the fourth reflective surface M4 as a reflective surface closest to the object surface, providing a sufficient front focus. An interval is 61.4 mm between the surface apex of the second reflective surface M2 and the surface apex of the fourth reflective surface M4, and an interval is 116 mm between the surface apex of the sixth reflective surface M6 and the surface apex of the first reflective surface M1 as a reflective surface that is closest to the sixth reflective surface M6. This configuration secures a sufficient thickness of the mirror and maintains the space, and facilitates arrangements of various mechanisms, such as a driving mechanism and a cooling mechanism. L1/L2 is 0.830, which is sufficient to provide a reduced incident angle, and a sufficient front focus, where L1 is an interval between the object surface and the surface apex of the fourth reflective surface M4 that is the reflective surface closest to the object surface, and L2 is an interval between the surface apex of the fourth reflective surface M4 that is the reflective surface closest to the object surface and the surface apex of the first reflective surface M1.

The convex surfaces of the second reflective surface M2 and the third reflective surface M3 enable the intermediate image IM to form at a position apart from the mirror, and provide an appropriate divergence of the light on the mirror surface. Thereby, this configuration reduces influences of the mirror surface's ripples, air bubbles in the mirror material, mirror's deformations, dust transfers, etc., and prevent deteriorations of the imaging performance. This intermediate image IM is formed between 0.4×Lim and 0.6×Lim where Lim is an optical path length between the fourth reflective surface M4 and fifth reflective surface M5.

An incident angle on each surface of a principal ray from an object point in a center of an arc illuminated area on the object surface is as follows. The incident angle to a surface normal is the maximum in the third reflective surface M3 and the value is as small as 25.1°. Therefore, the aberration decreases and the reductions of the reflectance due to the multilayer coating is prevented. Moreover, since the incident angle gradually increases in order of the first reflective surface M1, the second reflective surface M2 and the third reflective surface M3, the light from the object surface can be introduced to the fourth reflective surface M4 without shielding of the light. FIG. 11 is a view for explaining the incident angle to the surface normal of the fourth reflective surface M4 and the incident angle to the optical axis. The incident angles of other surfaces are similarly defined. The incident angles on each surface to the surface normal are θ11=10.4°, θ21=16.0°, θ31=25.1°, θ41=8.6°, θ51=11.9° and θ61=4.0°. The incident angles on each surface to the optical axis are θ12=5.9°, θ22=14.9°, θ32=17.2°, θ42=32.9°, θ52=15.7° and θ62=8.0°.

A ratio between absolute values of each surface apex intervals Le1 to Le6 and an overall length TT is as follows. The absolute value Le1 of the surface apex interval between the first reflective surface M1 and the second reflective surface M2 is the maximum of Le1 and Le2 and Le3, and the absolute value Le2 of the surface apex interval between the second reflective surface M2 and the third reflective surface M3 and the absolute value Le3 of the surface apex interval between the third reflective surface M3 and the fourth reflective surface M4 are almost same. Thereby, the space for arranging the components can be maintained, the light can be easily reflected without shielding of the light, and the aberration and the property of multilayer coating become advantageous. The ratio between the surface interval and the overall length are Le1/TT=0.261, Le2/TT=0.179, Le3/TT=0.229, Le0/TT=0.567, Le4/TT=0.709, Le5/TT=0.307 and Le6/TT=0.341.

The radius Rsto of the aperture stop is 32.5 mm and Rsto/NA is 130. The shielding of the light from the object surface to the first reflective surface M1 and the shielding of the light from the second reflective surface M2 to the third reflective surface M3 are prevented by being the radius of the aperture stop to small. Thereby, the large slit width of 5 mm can be realized while maintaining the higher NA of 0.25.

A spread radius SCA2 of light on the second reflective surface M2 is 25. 23 mm, a spread radius SCA3 of light on the third reflective surface M3 is 19.80 mm and a spread radius SCA4 of light on the fourth reflective surface M4 is 22.57 mm. Values divided each spread radiuses by the NA of 0.25 at the image side are distributed over a range of 70 to 105, and the optical system that has proper small effective areas of the second to the fourth reflective surface, facilitates the arrangement of components, decreases the maximum effective diameter and reduces the deteriorations of the imaging performance by dust transfers etc., can be realized.

The values of these conditions (values of each conditions of the first to seventh embodiment) are shown in Table 8 in detail.

In a principal ray from a center object point of 129 mm, a distance La1 between the object point and an intersecting point on the first reflective surface M1 in a direction perpendicular to the optical axis is 72.89 mm, a distance La2 between the intersecting point on the first reflective surface M1 and an intersecting point on the second reflective surface M2 in the direction perpendicular to the optical axis is 86.20 mm, a distance La3 between the intersecting point on the second reflective surface M2 and an intersecting point on the third reflective surface M3 in the direction perpendicular to the optical axis is 71.93 mm, a distance La4 between the intersecting point on the third reflective surface M3 and an intersecting point on the fourth reflective surface M4 in the direction perpendicular to the optical axis is 154.18 mm, and maximum value/minimum value among values divided them by the overall length is 2.14. Maximum value/minimum value among the surface apex interval between the first reflective surface M1 and the second reflective surface M2, the surface apex interval between the second reflective surface M2 and the third reflective surface M3 and the surface apex interval between the third reflective surface M3 and the fourth reflective surface M4 is 2.0 or less. TABLE 11 MIRROR NO. RADIUS OF CURVATURE SURFACE INTERVAL M (MASK) 0 709.84800 M1 −708.52400 −213.48700 APERTURE STOP 0 −112.96900 M2 −1500.00000 224.72309 M3 700.00000 −286.16900 M4 620.33200 888.54800 M5 323.10900 −384.64600 M6 462.76200 426.53600 W (WAFER) 0 0 ASPHERIC COEFICIENT K A B C D E F G M1 −1.74858E+00 9.23055E−10 −2.11112E−14 6.26883E−19 −5.13981E−23 4.93156E−27 −2.75614E−31 6.38279E−36 M2 1.34777E+01 −2.39738E−09 5.46835E−14 1.12216E−17 −9.34360E−21 3.73946E−24 −7.55884E−28 6.15488E−32 M3 1.03737E+00 −2.27691E−09 −8.91005E−14 1.17202E−17 −8.81984E−22 4.05103E−26 −1.04360E−30 1.15546E−35 M4 −2.54829E−02 8.94333E−11 −2.34462E−15 2.18505E−20 1.61745E−26 −2.39650E−30 2.06917E−36 −5.87149E−41 M5 3.42381E−01 −7.90071E−10 1.15783E−12 −8.04750E−17 5.00002E−20 −2.80048E−23 8.24008E−27 −9.64874E−31 M6 3.48259E−02 3.52475E−11 2.12796E−16 1.57268E−21 −5.50112E−27 1.06617E−31 8.17667E−38 −1.98369E−40

Second Embodiment

A description will be given of a second embodiment of the present invention with reference to FIG. 2 and Table 2. Unless otherwise specified, this embodiment is similar to the first embodiment. The overall length of the eighth embodiment is about 1267.046 mm. A numerical aperture NA at the image side is 0.237, a magnification is ¼, and an object point is 117.5 to 140.5 mm (while the image side has an arc field with a width of 5.75 mm). The wave front aberration has a RMS of 17.6 mλ, and a static distortion range of 1.5 nm.

An arrangement of the aperture stop between M1 and M2 prevents shielding of the light from the object surface to M1, although the object-side telecentricity is as small as 103 mrad. Since M2 and M3 introduce the light from the aperture stop to M4 apart from the optical axis, a distance between M3 and M4 can be relatively short although the maximum incident angle is maintained to be 27°. This distance and second reflective surface M2 having a convex shape provide an appropriate divergence of the light on the fourth reflective surface M4.

More specifically, the divergence of the light on the fourth reflective surface introduced from the object point of 129 mm is 45.5 mm. This configuration reduces influences of the mirror surface's ripples, air bubbles in the mirror material, mirror's deformations, dust transfers, etc., and prevent deteriorations of the imaging performance. Moreover, the maximum effective diameter is maintained to be 585 mm.

Preferably, the aperture stop is located apart from the first reflective surface M1 and second reflective surface M2 by a proper distance. In the instant embodiment, the aperture stop is located apart from the first reflective surface M1 by 0.656 Lst, and apart from the second reflective surface M2 by 0.344 Lst, where Lst is the optical axis length between the first reflective surface M1 and second reflective surface M2.

The third reflective surface M3 is a surface that has the largest light incident angle among the six reflective surfaces, which is 27°. The incident angle distribution width is 4.8°. The small incident angle distribution prevents reductions of the reflectance due to the multilayer coating.

A distance is 336.6 mm between the object surface and the fourth reflective surface M4 as a reflective surface closest to the object surface, providing a sufficient front focus. An interval is 52.6 mm between the surface apex of the second reflective surface M2 and the surface apex of the fourth reflective surface M4, and an interval is 116 mm between the surface apex of the sixth reflective surface M6 and the surface apex of the first reflective surface M1 as a reflective surface that is closest to the sixth reflective surface M6. This configuration secures a sufficient thickness of the mirror and maintains the space, and facilitates arrangements of various mechanisms, such as a driving mechanism and a cooling mechanism. L1/L2 is 0.888, which is sufficient to provide a reduced incident angle, and a sufficient front focus, where L1 is an interval between the object surface and the surface apex of the fourth reflective surface M4 that is the reflective surface closest to the object surface, and L2 is an interval between the surface apex of the fourth reflective surface M4 that is the reflective surface closest to the object surface and the surface apex of the first reflective surface M1.

The convex surfaces of the second reflective surface M2 and the third reflective surface M3 enable the intermediate image IM to form at a position apart from the mirror, and provide an appropriate divergence of the light on the mirror surface. Thereby, this configuration reduces influences of the mirror surface's ripples, air bubbles in the mirror material, mirror's deformations, dust transfers, etc., and prevent deteriorations of the imaging performance. This intermediate image IM is formed between 0.4×Lim and 0.6×Lim where Lim is an optical path length between the fourth reflective surface M4 and fifth reflective surface M5.

An incident angle on each surface of a principal ray from an object point in a center of an arc illuminated area on the object surface is as follows. The incident angle to a surface normal is the maximum in the third reflective surface M3 and the value is as small as 24.8°. Therefore, the aberration decreases and the reductions of the reflectance due to the multilayer coating is prevented. Moreover, since the incident angle gradually increases in order of the first reflective surface M1, the second reflective surface M2 and the third reflective surface M3, the light from the object surface can be introduced to the fourth reflective surface M4 without shielding of the light. The incident angles on each surface to the surface normal are θ11=10.3°, θ21=15.8°, θ31=24.8°, θ41=8.6°, θ51=11.7° and θ61=3.9°. The incident angles on each surface to the optical axis are θ12=5.9°, θ22=14.7°, θ32=16.9°, θ42=32.7°, θ52=15.5° and θ62=7.8°.

A ratio between absolute values of each surface apex intervals Le1 to Le6 and an overall length TT is as follows. The absolute value Le1 of the surface apex interval between the first reflective surface M1 and the second reflective surface M2 is the maximum of Le1 and Le2 and Le3, and the absolute value Le2 of the surface apex interval between the second reflective surface M2 and the third reflective surface M3 and the absolute value Le3 of the surface apex interval between the third reflective surface M3 and the fourth reflective surface M4 are almost same. Thereby, the space for arranging the components can be maintained, the light can be easily reflected without shielding of the light, and the aberration and the property of multilayer coating become advantageous. The ratio between the surface interval and the overall length are Le1/TT=0.258, Le2/TT=0.182, Le3/TT=0.223, Le0/TT=0.564, Le4/TT=0.701, Le5/TT=0.310 and Le6/TT=0.343.

The radius Rsto of the aperture stop is 31.23 mm and Rsto/NA is 131.8. The shielding of the light from the object surface to the first reflective surface M1 and the shielding of the light from the second reflective surface M2 to the third reflective surface M3 are prevented by being the radius of the aperture stop to small. Thereby, the large slit width of 5.75 mm can be realized.

A spread radius SCA2 of light on the second reflective surface M2 is 24.0455 mm, a spread radius SCA3 of light on the third reflective surface M3 is 19.49 mm and a spread radius SCA4 of light on the fourth reflective surface M4 is 22.755 mm. Values divided each spread radiuses by the NA at the image side of 0.237 are distributed over a range of 70 to 105, and the optical system that has proper small effective areas of the second to the fourth reflective surface, facilitates the arrangement of components, decreases the maximum effective diameter and reduces the deteriorations of the imaging performance by dust transfers etc., can be realized.

In a principal ray from a center object point, a distance La1 between the object point and an intersecting point on the first reflective surface M1 in a direction perpendicular to the optical axis is 73.51 mm, a distance La2 between the intersecting point on the first reflective surface M1 and an intersecting point on the second reflective surface M2 in the direction perpendicular to the optical axis is 84.97 mm, a distance La3 between the intersecting point on the second reflective surface M2 and an intersecting point on the third reflective surface M3 in the direction perpendicular to the optical axis is 72.38 mm, a distance La4 between the intersecting point on the third reflective surface M3 and an intersecting point on the fourth reflective surface M4 in the direction perpendicular to the optical axis is 151.12 mm, and maximum value/minimum value among values divided them by the overall length is 2.09. Maximum value/minimum value among the surface apex interval between the first reflective surface M1 and the second reflective surface M2, the surface apex interval between the second reflective surface M2 and the third reflective surface M3 and the surface apex interval between the third reflective surface M3 and the fourth reflective surface M4 is 2.0 or less. TABLE 2 MIRROR NO. RADIUS OF CURVATURE SURFACE INTERVAL M (MASK) 0 715.81900 M1 −716.12100 −214.26900 APERTURE STOP 0 −112.38900 M2 −1500.0000 230.03000 M3 700.00000 −282.61400 M4 618.19100 888.36900 M5 328.80000 −393.12700 M6 474.62300 435.12700 W (WAFER) 0 0 ASPHERIC COEFICIENT K A B C D E F G M1 −1.71111E+00 9.12114E−10 −2.08677E−14 5.53938E−19 −3.84470E−23 3.63612E−27 −1.99427E−31 4.40002E−36 M2 1.89149E+01 −2.33866E−09 5.14450E−14 1.55157E−17 −1.21994E−20 4.85447E−24 −9.95274E−28 8.27121E−32 M3 1.14144E+00 −2.26421E−09 −9.14399E−14 1.17075E−17 −8.65006E−22 3.90349E−26 −9.88059E−31 1.07411E−35 M4 −2.53894E−02 7.08647E−11 −2.04123E−16 1.92894E−20 1.31597E−26 −2.17749E−30 1.91061E−35 −5.55658E−41 M5 4.86684E−01 −1.05702E−09 1.10386E−12 −3.98425E−17 1.35296E−20 −8.97234E−24 2.59639E−27 −2.44935E−31 M6 1.86690E−02 5.28168E−11 2.79824E−16 1.76250E−21 9.21551E−27 −1.04462E−30 5.23515E−35 −8.18886E−40

Third Embodiment

A description will be given of a third embodiment of the present invention with reference to FIG. 3 and Table 3. Unless otherwise specified, this embodiment is similar to the first and second embodiments. The overall length of the third embodiment is about 1268.513 mm. A numerical aperture NA at the image side is 0.23, a magnification is ¼, and an object point is 117 to 141 mm (while the image side has an arc field with a width of 6 mm). The wave front aberration has a RMS of 17.0 mλ, and a static distortion range of 3.0 nm.

An arrangement of the aperture stop between M1 and M2 prevents shielding of the light from the object surface to M1, although the object-side telecentricity is as small as 103 mrad. Since M2 and M3 introduce the light from the aperture stop to M4 apart from the optical axis, a distance between M3 and M4 can be relatively short although the maximum incident angle is maintained to be 27°. This distance and second reflective surface M2 having a convex shape provide an appropriate divergence of the light on the fourth reflective surface M4.

More specifically, the divergence of the light on the fourth reflective surface introduced from the object point of 129 mm is 45.0 mm. This configuration reduces influences of the mirror surface's ripples, air bubbles in the mirror material, mirror's deformations, dust transfers, etc., and prevent deteriorations of the imaging performance. Moreover, the maximum effective diameter is maintained to be 585 mm.

Preferably, the aperture stop is located apart from the first reflective surface M1 and second reflective surface M2 by a proper distance. In the instant embodiment, the aperture stop is located apart from the first reflective surface M1 by 0.659 Lst, and apart from the second reflective surface M2 by 0.341 Lst, where Lst is the optical axis length between the first reflective surface M1 and second reflective surface M2.

The third reflective surface M3 is a surface that has the largest light incident angle among the six reflective surfaces, which is 27°. The incident angle distribution width is 4.9°. The small incident angle distribution prevents reductions of the reflectance due to the multilayer coating.

A distance is 340.8 mm between the object surface and the fourth reflective surface M4 as a reflective surface closest to the object surface, providing a sufficient front focus. An interval is 50.7 mm between the surface apex of the second reflective surface M2 and the surface apex of the fourth reflective surface M4, and an interval is 116 mm between the surface apex of the sixth reflective surface M6 and the surface apex of the first reflective surface M1 as a reflective surface that is closest to the sixth reflective surface M6. This configuration secures a sufficient thickness of the mirror and maintains the space, and facilitates arrangements of various mechanisms, such as a driving mechanism and a cooling mechanism. L1/L2 is 0.907, which is sufficient to provide a reduced incident angle, and a sufficient front focus, where L1 is an interval between the object surface and the surface apex of the fourth reflective surface M4 that is the reflective surface closest to the object surface, and L2 is an interval between the surface apex of the fourth reflective surface M4 that is the reflective surface closest to the object surface and the surface apex of the first reflective surface M1.

The convex surfaces of the second reflective surface M2 and the third reflective surface M3 enable the intermediate image IM to form at a position apart from the mirror, and provide an appropriate divergence of the light on the mirror surface. Thereby, this configuration reduces influences of the mirror surface's ripples, air bubbles in the mirror material, mirror's deformations, dust transfers, etc., and prevent deteriorations of the imaging performance. This intermediate image IM is formed between 0.4×Lim and 0.6×Lim where Lim is an optical path length between the fourth reflective surface M4 and fifth reflective surface M5.

An incident angle on each surface of a principal ray from an object point in a center of an arc illuminated area on the object surface is as follows. The incident angle to a surface normal is the maximum in the third reflective surface M3 and the value is as small as 24.7°. Therefore, the aberration decreases and the reductions of the reflectance due to the multilayer coating is prevented. Moreover, since the incident angle gradually increases in order of the first reflective surface M1, the second reflective surface M2 and the third reflective surface M3, the light from the object surface can be introduced to the fourth reflective surface M4 without shielding of the light. The incident angles on each surface to the surface normal are θ11=10.3°, θ21=15.8°, θ31=24.7°, θ41=8.5°, θ51=11.6° and θ61=3.9°. The incident angles on each surface to the optical axis are θ12=5.9°, θ22=14.6°, θ32=16.9°, θ42=32.6°, θ52=15.5° and θ62=7.8°.

A ratio between absolute values of each surface apex intervals Le1 to Le6 and an overall length TT is as follows. The absolute value Le1 of the surface apex interval between the first reflective surface M1 and the second reflective surface M2 is the maximum of Le1 and Le2 and Le3, and the absolute value Le2 of the surface apex interval between the second reflective surface M2 and the third reflective surface M3 and the absolute value Le3 of the surface apex interval between the third reflective surface M3 and the fourth reflective surface M4 are almost same. Thereby, the space for arranging the components can be maintained, the light can be easily reflected without shielding of the light, and the aberration and the property of multilayer coating become advantageous. The ratio between the surface interval and the overall length are Le1/TT=0.256, Le2/TT=0.183, Le3/TT=0.223, Le0/TT=0.565, Le4/TT=0.698, Le5/TT=0.311 and Le6/TT=0.344.

The radius Rsto of the aperture stop is 30.4 mm and Rsto/NA is 132. The shielding of the light from the object surface to the first reflective surface M1 and the shielding of the light from the second reflective surface M2 to the third reflective surface M3 are prevented by being the radius of the aperture stop to small. Thereby, the large slit width of 6 mm can be realized.

A spread radius SCA2 of light on the second reflective surface M2 is 23.93 mm, a spread radius SCA3 of light on the third reflective surface M3 is 19.135 mm and a spread radius SCA4 of light on the fourth reflective surface M4 is 22.50 mm. Values divided each spread radiuses by the NA at the image side of 0.23 are distributed over a range of 70 to 105, and the optical system that has proper small effective areas of the second to the fourth reflective surface, facilitates the arrangement of components, decreases the maximum effective diameter and reduces the deteriorations of the imaging performance by dust transfers etc., can be realized.

In a principal ray from a center object point, a distance La1 between the object point and an intersecting point on the first reflective surface M1 in a direction perpendicular to the optical axis is 73.59 mm, a distance La2 between the intersecting point on the first reflective surface M1 and an intersecting point on the second reflective surface M2 in the direction perpendicular to the optical axis is 84.38 mm, a distance La3 between the intersecting point on the second reflective surface M2 and an intersecting point on the third reflective surface M3 in the direction perpendicular to the optical axis is 72.57 mm, a distance La4 between the intersecting point on the third reflective surface M3 and an intersecting point on the fourth reflective surface M4 in the direction perpendicular to the optical axis is 150.59 mm, and maximum value/minimum value among values divided them by the overall length is 2.07. Maximum value/minimum value among the surface apex interval between the first reflective surface M1 and the second reflective surface M2, the surface apex interval between the second reflective surface M2 and the third reflective surface M3 and the surface apex interval between the third reflective surface M3 and the fourth reflective surface M4 is 2.0 or less. TABLE 3 MIRROR NO. RADIUS OF CURVATURE SURFACE INTERVAL M (MASK) 0 716.58300 M1 −717.61400 −214.40800 APERATURE STOP 0 −110.70300 M2 −1500.00000 231.76300 M3 700.00000 −282.46700 M4 617.60500 866.74300 M5 329.40000 −398.92500 M6 427.31400 435.92800 W (WAFER) 0 0 ASPERIC COEFFICIENT K A B C D E F G M1 −1.74713E+00 8.94786E−10 −2.06679E−14 5.70246E−19 −4.28929E−23 4.19048E−27 −2.30821E−31 5.08221E−36 M2 2.23191E+01 −2.26707E−09 5.76002E−14 1.44485E−17 −1.25019E−20 5.24338E−24 −1.11828E−27 8.61434E−32 M3 1.15153E+00 −2.24785E−09 −9.21410E−14 1.17315E−17 −8.63668E−22 3.88096E−26 −9.77901E−31 1.05773E−35 M4 −2.50634E−02 6.85004E−11 −1.88900E−15 1.80076E−20 1.20330E−26 −2.14854E−30 1.89574E−35 −5.54395E−41 M5 4.77515E−01 −1.01282E−09 1.10973E−12 −4.38480E−14 2.22619E−20 −1.55145E−23 4.68958E−27 −4.86211E−31 M6 1.88278E−02 5.25050E−11 2.76702E−16 1.46126E−21 4.71248E−26 −3.74731E−30 1.48207E−34 −2.17320E−39

Fourth Embodiment

A description will be given of a fourth embodiment of the present invention with reference to FIG. 4 and Table 4. Unless otherwise specified, this embodiment is similar to the firth to third embodiments. The overall length of the fourth embodiment is about 1197.8 mm. A numerical aperture NA at the image side is 0.28, a magnification is ¼, and an object point is 122.75 to 130.75 mm (while the image side has an arc field with a width of 2 mm). The wave front aberration has a RMS of 14.3 mλ, and a static distortion range of 3.0 nm.

An arrangement of the aperture stop between M1 and M2 prevents shielding of the light from the object surface to M1, although the object-side telecentricity is as small as 103 mrad. Since M2 and M3 introduce the light from the aperture stop to M4 apart from the optical axis, a distance between M3 and M4 can be relatively short although the maximum incident angle is maintained to be 27°. This distance and second reflective surface M2 having a convex shape provide an appropriate divergence of the light on the fourth reflective surface M4.

More specifically, the divergence of the light on the fourth reflective surface introduced from the object point of 126.75 mm is 42.4 mm. This configuration reduces influences of the mirror surface's ripples, air bubbles in the mirror material, mirror's deformations, dust transfers, etc., and prevent deteriorations of the imaging performance. Moreover, the maximum effective diameter is maintained to be 550 mm.

Preferably, the aperture stop is located apart from the first reflective surface M1 and second reflective surface M2 by a proper distance. In the instant embodiment, the aperture stop is located apart from the first reflective surface M1 by 0.660 Lst, and apart from the second reflective surface M2 by 0.340 Lst, where Lst is the optical axis length between the first reflective surface M1 and second reflective surface M2.

The third reflective surface M3 is a surface that has the largest light incident angle among the six reflective surfaces, which is 26.9°. The incident angle distribution width is 2.59°. The small incident angle distribution prevents reductions of the reflectance due to the multilayer coating.

A distance is 317.5 mm between the object surface and the fourth reflective surface M4 as a reflective surface closest to the object surface, providing a sufficient front focus. An interval is 42.0 mm between the surface apex of the second reflective surface M2 and the surface apex of the fourth reflective surface M4, and an interval is 118 mm between the surface apex of the sixth reflective surface M6 and the surface apex of the first reflective surface M1 as a reflective surface that is closest to the sixth reflective surface M6. This configuration secures a sufficient thickness of the mirror and maintains the space, and facilitates arrangements of various mechanisms, such as a driving mechanism and a cooling mechanism. L1/L2 is 0.899, which is sufficient to provide a reduced Incident angle, and a sufficient front focus, where L1 is an interval between the object surface and the surface apex of the fourth reflective surface M4 that is the reflective surface closest to the object surface, and L2 is an interval between the surface apex of the fourth reflective surface M4 that is the reflective surface closest to the object surface and the surface apex of the first reflective surface M1.

The convex surfaces of the second reflective surface M2 and the third reflective surface M3 enable the intermediate image IM to form at a position apart from the mirror, and provide an appropriate divergence of the light on the mirror surface. Thereby, this configuration reduces influences of the mirror surface's ripples, air bubbles in the mirror material, mirror's deformations, dust transfers, etc., and prevent deteriorations of the imaging performance. This intermediate image IM is formed between 0.4×Lim and 0.6×Lim where Lim is an optical path length between the fourth reflective surface M4 and fifth reflective surface M5.

An incident angle on each surface of a principal ray from an object point in a center of an arc illuminated area on the object surface is as follows. The incident angle to a surface normal is the maximum in the third reflective surface M3 and the value is as small as 26.1°. Therefore, the aberration decreases and the reductions of the reflectance due to the multilayer coating is prevented. Moreover, since the incident angle gradually increases in order of the first reflective surface M1, the second reflective surface M2 and the third reflective surface M3, the light from the object surface can be introduced to the fourth reflective surface M4 without shielding of the light. The incident angles of other surfaces are similarly defined. The incident angles on each surface to the surface normal are θ11=10.8°, θ21=17.0°, θ31=26.1°, θ41=8.8°, θ51=11.9° and θ61=4.2°. The incident angles on each surface to the optical axis are θ12=5.9°, θ22=15.7°, θ32=18.3°, θ42=33.9°, θ52=16.3° and θ62=7.5°.

A ratio between absolute values of each surface apex intervals Le1 to Le6 and an overall length TT is as follows. The absolute value Le1 of the surface apex interval between the first reflective surface M1 and the second reflective surface M2 is the maximum of Le1 and Le2 and Le3, and the absolute value Le2 of the surface apex interval between the second reflective surface M2 and the third reflective surface M3 and the absolute value Le3 of the surface apex interval between the third reflective surface M3 and the fourth reflective surface M4 are almost same. Thereby, the space for arranging the components can be maintained, the light can be easily reflected without shielding of the light, and the aberration and the property of multilayer coating become advantageous. The ratio between the surface interval and the overall length are Le1/TT=0.260, Le2/TT=0.187, Le3/TT=0.222, Le0/TT=0.560, Le4/TT=0.702, Le5/TT=0.309 and Le6/TT=0.342.

The radius Rsto of the aperture stop is 34.16 mm and Rsto/NA is 122. The shielding of the light from the object surface to the first reflective surface M1 and the shielding of the light from the second reflective surface M2 to the third reflective surface M3 are prevented by being the radius of the aperture stop to small. Thereby, the higher NA of 0.28 can be realized.

A spread radius SCA2 of light on the second reflective surface M2 is 26.445 mm, a spread radius SCA3 of light on the third reflective surface M3 is 20.28 mm and a spread radius SCA4 of light on the fourth reflective surface M4 is 21.215 mm. Values divided each spread radiuses by the NA at the image side of 0.28 are distributed over a range of 70 to 105, and the optical system that has proper small effective areas of the second to the fourth reflective surface, facilitates the arrangement of components, decreases the maximum effective diameter and reduces the deteriorations of the imaging performance by dust transfers etc., can be realized.

In a principal ray from a center object point, a distance La1 between the object point and an intersecting point on the first reflective surface M1 in a direction perpendicular to the optical axis is 69.62 mm, a distance La2 between the intersecting point on the first reflective surface M1 and an intersecting point on the second reflective surface M2 in the direction perpendicular to the optical axis is 87.05 mm, a distance La3 between the intersecting point on the second reflective surface M2 and an intersecting point on the third reflective surface M3 in the direction perpendicular to the optical axis is 76.75 mm, a distance La4 between the intersecting point on the third reflective surface M3 and an intersecting point on the fourth reflective surface M4 in the direction perpendicular to the optical axis is 145.86 mm, and maximum value/minimum value among values divided them by the overall length is 2.10. Maximum value/minimum value among the surface apex interval between the first reflective surface M1 and the second reflective surface M2, the surface apex interval between the second reflective surface M2 and the third reflective surface M3 and the surface apex interval between the third reflective surface M3 and the fourth reflective surface M4 is 2.0 or less. TABLE 11 MIRROR NO. RADIUS OF CURVATURE SURFACE INTERVAL M (MASK) 0 670.591 M1 −859.497 −205.272 APERTURE STOP 0 −105.9 M2 −1352.71 224.219 M3 735.115 −266.180 M4 592.799 841.344 M5 298.557 −370.205 M6 443.971 409.205 W (WAFER) 0 0 ASPHERIC COEFICIENT K A B C D E F G M1 −1.92456 1.14998E−09 −3.19290E−14 9.24465E−19 −4.64961E−23 3.11869E−27 −1.51805E−31 3.40228E−36 M2 3.80306 −2.58172E−09 8.59253E−14 −9.06083E−18 2.26366E−21 1.71212E−26 −1.12695E−28 1.52306E−32 M3 1.03203 −2.24027E−09 −7.30454E−14 1.13803E−17 −9.39592E−22 4.59950E−26 −1.23588E−30 1.40753E−35 M4 −0.03503 4.40285E−11 −1.93230E−15 2.51443E−20 −2.81590E−26 −3.13819E−30 3.37014E−35 −1.12233E−40 M5 −0.21853 3.15240E−10 1.68411E−12 −1.26167E−16 5.19924E−20 −2.12313E−23 5.31435E−27 −5.88060E−31 M6 0.00357 8.17612E−11 4.90594E−16 2.08139E−21 6.15332E−26 −1.96376E−30 4.65098E−35 −4.71272E−40

Fifth Embodiment

A description will be given of a fifth embodiment of the present invention with reference to FIG. 5 and Table 5. Unless otherwise specified, this embodiment is similar to the first to fourth embodiments. The overall length of the fifth embodiment is about 1217.03 mm. A numerical aperture NA at the image side is 0.3, a magnification is ¼, and an object point is 126.8 to 132.8 mm (while the image side has an arc field with a width of 1.5 mm). The wave front aberration has a RMS of 13.6 mλ, and a static distortion range of 3.0 nm.

An arrangement of the aperture stop between M1 and M2 prevents shielding of the light from the object surface to M1, although the object-side telecentricity is as small as 103 mrad. Since M2 and M3 introduce the light from the aperture stop to M4 apart from the optical axis, a distance between M3 and M4 can be relatively short although the maximum incident angle is maintained to be 27°. This distance and second reflective surface M2 having a convex shape provide an appropriate divergence of the light on the fourth reflective surface M4.

More specifically, the divergence of the light on the fourth reflective surface introduced from the object point of 129.8 mm is 49.0 mm. This configuration reduces influences of the mirror surface's ripples, air bubbles in the mirror material, mirror's deformations, dust transfers, etc., and prevent deteriorations of the imaging performance. Moreover, the maximum effective diameter is maintained to be 560 mm.

Preferably, the aperture stop is located apart from the first reflective surface M1 and second reflective surface M2 by a proper distance. In the instant embodiment, the aperture stop is located apart from the first reflective surface M1 by 0.653 Lst, and apart from the second reflective surface M2 by 0.347 Lst, where Lst is the optical axis length between the first reflective surface M1 and second reflective surface M2.

The third reflective surface M3 is a surface that has the largest light incident angle among the six reflective surfaces, which is 27.0°. The incident angle distribution width is 2.06°. The small incident angle distribution prevents reductions of the reflectance due to the multilayer coating.

A distance is 333.3 mm between the object surface and the fourth reflective surface M4 as a reflective surface closest to the object surface, providing a sufficient front focus. An interval is 27.4 mm between the surface apex of the second reflective surface M2 and the surface apex of the fourth reflective surface M4, and an interval is 117 mm between the surface apex of the sixth reflective surface M6 and the surface apex of the first reflective surface M1 as a reflective surface that is closest to the sixth reflective surface M6. This configuration secures a sufficient thickness of the mirror and maintains the space, and facilitates arrangements of various mechanisms, such as a driving mechanism and a cooling mechanism. L1/L2 is 0.941, which is sufficient to provide a reduced incident angle, and a sufficient front focus, where L1 is an interval between the object surface and the surface apex of the fourth reflective surface M4 that is the reflective surface closest to the object surface, and L2 is an interval between the surface apex of the fourth reflective surface M4 that is the reflective surface closest to the object surface and the surface apex of the first reflective surface M1.

The convex surfaces of the second reflective surface M2 and the third reflective surface M3 enable the intermediate image IM to form at a position apart from the mirror, and provide an appropriate divergence of the light on the mirror surface. Thereby, this configuration reduces influences of the mirror surface's ripples, air bubbles in the mirror material, mirror's deformations, dust transfers, etc., and prevent deteriorations of the imaging performance. This intermediate image IM is formed between 0.4×Lim and 0.6×Lim where Lim is an optical path length between the fourth reflective surface M4 and fifth reflective surface M5.

An incident angle on each surface of a principal ray from an object point in a center of an arc illuminated area on the object surface is as follows. The incident angle to a surface normal is the maximum in the third reflective surface M3 and the value is as small as 23°. Therefore, the aberration decreases and the reductions of the reflectance due to the multilayer coating is prevented. Moreover, since the incident angle gradually increases in order of the first reflective surface M1, the second reflective surface M2 and the third reflective surface M3, the light from the object surface can be introduced to the fourth reflective surface M4 without shielding of the light. The incident angles on each surface to the surface normal are θ11=10.8°, θ21=17.1°, θ31=26.4°, θ41=8.8°, θ51=12.1° and θ61=4.2°. The incident angles on each surface to the optical axis are θ12=5.9°, θ22=15.7°, θ32=18.6°, θ42=34.2°, θ52=16.6° and θ62=7.7°.

A ratio between absolute values of each surface apex intervals Le1 to Le6 and an overall length TT is as follows. The absolute value Le1 of the surface apex interval between the first reflective surface M1 and the second reflective surface M2 is the maximum of Le1 and Le2 and Le3, and the absolute value Le2 of the surface apex interval between the second reflective surface M2 and the third reflective surface M3 and the absolute value Le3 of the surface apex interval between the third reflective surface M3 and the fourth reflective surface M4 are almost same. Thereby, the space for arranging the components can be maintained, the light can be easily reflected without shielding of the light, and the aberration and the property of multilayer coating become advantageous. The ratio between the surface interval and the overall length are Le1/TT=0.268, Le2/TT=0.192, Le3/TT=0.215, Le0/TT=0.565, Le4/TT=0.694, Le5/TT=0.307 and Le6/TT=0.339.

The radius Rsto of the aperture stop is 37.53 mm and Rsto/NA is 125. The shielding of the light from the object surface to the first reflective surface M1 and the shielding of the light from the second reflective surface M2 to the third reflective surface M3 are prevented by being the radius of the aperture stop to small. Thereby, the higher NA of 0.3 can be realized.

A spread radius SCA2 of light on the second reflective surface M2 is 28.845 mm, a spread radius SCA3 of light on the third reflective surface M3 is 22.99 mm and a spread radius SCA4 of light on the fourth reflective surface M4 is 24.52 mm. Values divided each spread radiuses by the NA at the image side of 0.3 are distributed over a range of 70 to 105, and the optical system that has proper small effective areas of the second to the fourth reflective surface, facilitates the arrangement of components, decreases the maximum effective diameter and reduces the deteriorations of the imaging performance by dust transfers etc., can be realized.

In a principal ray from a center object point, a distance La1 between the object point and an intersecting point on the first reflective surface M1 in a direction perpendicular to the optical axis is 70.63 mm, a distance La2 between the intersecting point on the first reflective surface M1 and an intersecting point on the second reflective surface M2 in the direction perpendicular to the optical axis is 90.63 mm, a distance La3 between the intersecting point on the second reflective surface M2 and an intersecting point on the third reflective surface M3 in the direction perpendicular to the optical axis is 80.89 mm, a distance La4 between the intersecting point on the third reflective surface M3 and an intersecting point on the fourth reflective surface M4 in the direction perpendicular to the optical axis is 143.01 mm, and maximum value/minimum value among values divided them by the overall length is 2.03. Maximum value/minimum value among the surface apex interval between the first reflective surface M1 and the second reflective surface M2, the surface apex interval between the second reflective surface M2 and the third reflective surface M3 and the surface apex interval between the third reflective surface M3 and the fourth reflective surface M4 is 2.0 or less. TABLE 11 MIRROR NO. RADIUS OF CURVATURE SURFACE INTERVAL M (MASK) 0 687.366 M1 −681.249 −213.179 APERTURE STOP 0 −113.491 M2 −1288.27 234.023 M3 779.994 −261.46 M4 597.538 844.271 M5 301.975 −373.163 M6 447.301 412.663 W (WAFER) 0 0 ASPHERIC COEFICIENT K A B C D E F G M1 −2.02386 1.00748E−09 −2.82721E−14 6.72320E−19 −1.62257E−23 2.52910E−28 2.36658E−33 −1.05321E−37 M2 −102.576 −7.93468E−09 2.57476E−13 −1.76631E−17 5.18720E−21 −1.17785E−24 1.45201E−28 −7.14830E−33 M3 2.029 −1.75137E−09 −1.19223E−13 1.39221E−17 −9.58400E−22 3.99838E−26 −9.26698E−31 9.18349E−36 M4 −0.019234 4.64214E−11 −1.83545E−15 2.30505E−20 −2.49297E−26 −2.55693E−30 2.62026E−35 −8.30837E−41 M5 1.3855 −7.42065E−09 1.53204E−12 −7.41294E−17 3.69127E−21 2.39456E−24 −8.42619E−28 8.92952E−32 M6 0.0201243 5.37511E−11 3.39841E−16 1.95344E−21 −1.45311E−26 1.79966E−30 −5.51264E−35 5.61191E−40

Sixth Embodiment

A description will be given of a sixth embodiment of the present invention with reference to FIG. 6 and Table 6. Unless otherwise specified, this embodiment is similar to the first to fifth embodiment. The overall length of the sixth embodiment is about 1177.13 mm. A numerical aperture NA at the image side is 0.32, a magnification is ¼, and an object point is 128.5 to 132.5 mm (while the image side has an arc field with a width of 1 mm). The wave front aberration has a RMS of 14.2 mλ, and a static distortion range of 1.7 nm.

An arrangement of the aperture stop between M1 and M2 prevents shielding of the light from the object surface to M1, although the object-side telecentricity is as small as 107 mrad. Since M2 and M3 introduce the light from the aperture stop to M4 apart from the optical axis, a distance between M3 and M4 can be relatively short although the maximum incident angle is maintained to be 27°. This distance and second reflective surface M2 having a convex shape provide an appropriate divergence of the light on the fourth reflective surface M4.

More specifically, the divergence of the light on the fourth reflective surface introduced from the object point of 130.5 mm is 50.2 mm. This configuration reduces influences of the mirror surface's ripples, air bubbles in the mirror material, mirror's deformations, dust transfers, etc., and prevent deteriorations of the imaging performance. Moreover, the maximum effective diameter is maintained to be 568 mm.

Preferably, the aperture stop is located apart from the first reflective surface M1 and second reflective surface M2 by a proper distance. In the instant embodiment, the aperture stop is located apart from the first reflective surface M1 by 0.645 Lst, and apart from the second reflective surface M2 by 0.355 Lst, where Lst is the optical axis length between the first reflective surface M1 and second reflective surface M2.

The third reflective surface M3 is a surface that has the largest light incident angle among the six reflective surfaces, which is 27.1°. The incident angle distribution width is 1.80°. The small incident angle distribution prevents reductions of the reflectance due to the multilayer coating.

A distance is 311.2 mm between the object surface and the fourth reflective surface M4 as a reflective surface closest to the object surface, providing a sufficient front focus. An interval is 22.8 mm between the surface apex of the second reflective surface M2 and the surface apex of the fourth reflective surface M4, and an interval is 116 mm between the surface apex of the sixth reflective surface M6 and the surface apex of the first reflective surface M1 as a reflective surface that is closest to the sixth reflective surface M6. This configuration secures a sufficient thickness of the mirror and maintains the space, and facilitates arrangements of various mechanisms, such as a driving mechanism and a cooling mechanism. L1/L2 is 0.892, which is sufficient to provide a reduced incident angle, and a sufficient front focus, where L1 is an interval between the object surface and the surface apex of the fourth reflective surface M4 that is the reflective surface closest to the object surface, and L2 is an interval between the surface apex of the fourth reflective surface M4 that is the reflective surface closest to the object surface and the surface apex of the first reflective surface M1.

The convex surfaces of the second reflective surface M2 and the third reflective surface M3 enable the intermediate image IM to form at a position apart from the mirror, and provide an appropriate divergence of the light on the mirror surface. Thereby, this configuration reduces influences of the mirror surface's ripples, air bubbles in the mirror material, mirror's deformations, dust transfers, etc., and prevent deteriorations of the imaging performance. This intermediate image IM is formed between 0.4×Lim and 0.6×Lim where Lim is an optical path length between the fourth reflective surface M4 and fifth reflective surface M5.

An incident angle on each surface of a principal ray from an object point in a center of an arc illuminated area on the object surface is as follows. The incident angle to a surface normal is the maximum in the third reflective surface M3 and the value is as small as 26.7°. Therefore, the aberration decreases and the reductions of the reflectance due to the multilayer coating is prevented. Moreover, since the incident angle gradually increases in order of the first reflective surface M1, the second reflective surface M2 and the third reflective surface M3, the light from the object surface can be introduced to the fourth reflective surface M4 without shielding of the light. The incident angles of other surfaces are similarly defined. The incident angles on each surface to the surface normal are θ11=11.1°°, θ21=17.4°, θ31=26.7°, θ41=8.6°, θ51=12.7° and θ61=4.4°. The incident angles on each surface to the optical axis are θ12=6.1°, θ22=16.1°, θ32=18.7°, θ42=34.7°, θ52=17.4° and θ62=7.9°.

A ratio between absolute values of each surface apex intervals Le1 to Le6 and an overall length TT is as follows. The absolute value Le1 of the surface apex interval between the first reflective surface M1 and the second reflective surface M2 is the maximum of Le1 and Le2 and Le3, and the absolute value Le2 of the surface apex interval between the second reflective surface M2 and the third reflective surface M3 and the absolute value Le3 of the surface apex interval between the third reflective surface M3 and the fourth reflective surface M4 are almost same. Thereby, the space for arranging the components can be maintained, the light can be easily reflected without shielding of the light, and the aberration and the property of multilayer coating become advantageous. The ratio between the surface interval and the overall length are Le1/TT=0.278, Le2/TT=0.204, Le3/TT=0.224, Le0/TT=0.562, Le4/TT=0.702, Le5/TT=0.306 and Le6/TT=0.339.

The radius Rsto of the aperture stop is 39.5 mm and Rsto/NA is 123.4. The shielding of the light from the object surface to the first reflective surface M1 and the shielding of the light from the second reflective surface M2 to the third reflective surface M3 are prevented by being the radius of the aperture stop to small. Thereby, the higher NA of 0.32 can be realized.

A spread radius SCA2 of light on the second reflective surface M2 is 30.67 mm, a spread radius SCA3 of light on the third reflective surface M3 is 23.97 mm and a spread radius SCA4 of light on the fourth reflective surface M4 is 25.095 mm. Values divided each spread radiuses by the NA at the image side of 0.32 are distributed over a range of 70 to 105, and the optical system that has proper small effective areas of the second to the fourth reflective surface, facilitates the arrangement of components, decreases the maximum effective diameter and reduces the deteriorations of the imaging performance by dust transfers etc., can be realized.

In a principal ray from a center object point, a distance La1 between the object point and an intersecting point on the first reflective surface M1 in a direction perpendicular to the optical axis is 70.47 mm, a distance La2 between the intersecting point on the first reflective surface M1 and an intersecting point on the second reflective surface M2 in the direction perpendicular to the optical axis is 93.56 mm, a distance La3 between the intersecting point on the second reflective surface M2 and an intersecting point on the third reflective surface M3 in the direction perpendicular to the optical axis is 84.53 mm, a distance La4 between the intersecting point on the third reflective surface M3 and an intersecting point on the fourth reflective surface M4 in the direction perpendicular to the optical axis is 145.84 mm, and maximum value/minimum value among values divided them by the overall length is 2.07. Maximum value/minimum value among the surface apex interval between the first reflective surface M1 and the second reflective surface M2, the surface apex interval between the second reflective surface M2 and the third reflective surface M3 and the surface apex interval between the third reflective surface M3 and the fourth reflective surface M4 is 2.0 or less. TABLE 11 MIRROR NO. RADIUS OF CURVATURE SURFACE INTERVAL M (MASK) 0 661.818 M1 −679.127 −211.073 APERTURE STOP 0 −116.028 M2 −1462.34 240.694 M3 802.546 −263.48 M4 600.293 826.391 M5 285.822 −360.504 M6 431.98 399.309 W (WAFER) 0 0 ASPHERIC COEFICIENT K A B C D E F G M1 −2.08435 1.13471E−09 −3.50912E−14 9.98832E−19 −3.73070E−23 1.59418E−27 −5.20263E−32 8.48553E−37 M2 −90.7447 −4.76185E−09 1.44614E−13 −1.24484E−17 5.27782E−21 −1.33127E−24 1.78795E−28 −9.93888E−33 M3 2.81481 −1.35582E−09 −1.39699E−13 1.45038E−17 −9.13239E−22 3.48577E−26 −7.45019E−31 6.79270E−36 M4 0.0074938 6.81806E−11 −2.19603E−15 2.21401E−20 −1.05492E−27 −2.24637E−30 1.96167E−35 −5.36173E−41 M5 1.34634 −8.23739E−09 1.91735E−12 −1.17376E−16 2.13264E−20 −4.69506E−24 8.47933E−28 −7.51998E−32 M6 0.014386 8.58183E−11 4.41337E−01 2.44618E−21 2.21444E−26 −3.62807E−31 1.31309E−35 −1.41058E−40

Seventh Embodiment

A description will be given of a seventh embodiment of the present invention with reference to FIG. 7 and Table 7. Unless otherwise specified, this embodiment is similar to the fifth to sixth embodiments. The overall length of the seventh embodiment is about 1231.8 mm. A numerical aperture NA at the image side is 0.26, a magnification is ¼, and an object point is 121 to 137 mm (while the image side has an arc field with a width of 4 mm). The wave front aberration has a RMS of 15.6 mλ, and a static distortion range of 4.0 nm.

An arrangement of the aperture stop between M1 and M2 prevents shielding of the light from the object surface to M1, although the object-side telecentricity is as small as 103 mrad. Since M2 and M3 introduce the light from the aperture stop to M4 apart from the optical axis, a distance between M3 and M4 can be relatively short although the maximum incident angle is maintained to be 27°. This distance and second reflective surface M2 having a convex shape provide an appropriate divergence of the light on the fourth reflective surface M4.

More specifically, the divergence of the light on the fourth reflective surface introduced from the object point of 129 mm is 49.7 mm. This configuration reduces influences of the mirror surface's ripples, air bubbles in the mirror material, mirror's deformations, dust transfers, etc., and prevent deteriorations of the imaging performance. Moreover, the maximum effective diameter is maintained to be 582 mm.

Preferably, the aperture stop is located apart from the first reflective surface M1 and second reflective surface M2 by a proper distance. In the instant embodiment, the aperture stop is located apart from the first reflective surface M1 by 0.657 Lst, and apart from the second reflective surface M2 by 0.343 Lst, where Lst is the optical axis length between the first reflective surface M1 and second reflective surface M2.

The third reflective surface M3 is a surface that has the largest light incident angle among the six reflective surfaces, which is 27°. The incident angle distribution width is 3.50°. The small incident angle distribution prevents reductions of the reflectance due to the multilayer coating.

A distance is 309.8 mm between the object surface and the fourth reflective surface M4 as a reflective surface closest to the object surface, providing a sufficient front focus. An interval is 64.0 mm between the surface apex of the second reflective surface M2 and the surface apex of the fourth reflective surface M4, and an interval is 116 mm between the surface apex of the sixth reflective surface M6 and the surface apex of the first reflective surface M1 as a reflective surface that is closest to the sixth reflective surface M6. This configuration secures a sufficient thickness of the mirror and maintains the space, and facilitates arrangements of various mechanisms, such as a driving mechanism and a cooling mechanism. L1/L2 is 0.794, which is sufficient to provide a reduced incident angle, and a sufficient front focus, where L1 is an interval between the object surface and the surface apex of the fourth reflective surface M4 that is the reflective surface closest to the object surface, and L2 is an interval between the surface apex of the fourth reflective surface M4 that is the reflective surface closest to the object surface and the surface apex of the first reflective surface M1.

The convex surfaces of the second reflective surface M2 and the third reflective surface M3 enable the intermediate image IM to form at a position apart from the mirror, and provide an appropriate divergence of the light on the mirror surface. Thereby, this configuration reduces influences of the mirror surface's ripples, air bubbles in the mirror material, mirror's deformations, dust transfers, etc., and prevent deteriorations of the imaging performance. This intermediate image IM is formed between 0.4×Lim and 0.6×Lim where Lim is an optical path length between the fourth reflective surface M4 and fifth reflective surface M5.

An incident angle on each surface of a principal ray from an object point in a center of an arc illuminated area on the object surface is as follows. The incident angle to a surface normal is the maximum in the third reflective surface M3 and the value is as small as 25.4°. Therefore, the aberration decreases and the reductions of the reflectance due to the multilayer coating is prevented. Moreover, since the incident angle gradually increases in order of the first reflective surface M1, the second reflective surface M2 and the third reflective surface M3, the light from the object surface can be introduced to the fourth reflective surface M4 without shielding of the light. The incident angles of other surfaces are similarly defined. The incident angles on each surface to the surface normal are θ11=10.5°, θ21=16.3°, θ31=25.4°, θ41=8.7°, θ51=12.0° and θ61=4.1°. The incident angles on each surface to the optical axis are θ12=5.9°, θ22=15.1°, θ32=17.5°, θ42=33.3°, θ52=15.9° and θ62=8.1°.

A ratio between absolute values of each surface apex intervals Le1 to Le6 and an overall length TT is as follows. The absolute value Le1 of the surface apex interval between the first reflective surface M1 and the second reflective surface M2 is the maximum of Le1 and Le2 and Le3, and the absolute value Le2 of the surface apex interval between the second reflective surface M2 and the third reflective surface M3 and the absolute value Le3 of the surface apex interval between the third reflective surface M3 and the fourth reflective surface M4 are almost same. Thereby, the space for arranging the components can be maintained, the light can be easily reflected without shielding of the light, and the aberration and the property of multilayer coating become advantageous. The ratio between the surface interval and the overall length are Le1/TT=0.265, Le2/TT=0.179, Le3/TT=0.230, Le0/TT=0.568, Le4/TT=0.713, Le5/TT=0.302 and Le6/TT=0.338.

The radius Rsto of the aperture stop is 33.65 mm and Rsto/NA is 129. The shielding of the light from the object surface to the first reflective surface M1 and the shielding of the light from the second reflective surface M2 to the third reflective surface M3 are prevented by being the radius of the aperture stop to small. Thereby, the large slit width of 4 mm can be realized while maintaining the higher NA of 0.26.

A spread radius SCA2 of light on the second reflective surface M2 is 26.055 mm, a spread radius SCA3 of light on the third reflective surface M3 is 20.675 mm and a spread radius SCA4 of light on the fourth reflective surface M4 is 23.745 mm. Values divided each spread radiuses by the NA at the image side of 0.26 are distributed over a range of 70 to 105, and the optical system that has proper small effective areas of the second to the fourth reflective surface, facilitates the arrangement of components, decreases the maximum effective diameter and reduces the deteriorations of the imaging performance by dust transfers etc., can be realized.

In a principal ray from a center object point, a distance La1 between the object point and an intersecting point on the first reflective surface M1 in a direction perpendicular to the optical axis is 72.49 mm, a distance La2 between the intersecting point on the first reflective surface M1 and an intersecting point on the second reflective surface M2 in the direction perpendicular to the optical axis is 87.13 mm, a distance La3 between the intersecting point on the second reflective surface M2 and an intersecting point on the third reflective surface M3 in the direction perpendicular to the optical axis is 73.12 mm, a distance La4 between the intersecting point on the third reflective surface M3 and an intersecting point on the fourth reflective surface M4 in the direction perpendicular to the optical axis is 155.32 mm, and maximum value/minimum value among values divided them by the overall length is 2.14. Maximum value/minimum value among the surface apex interval between the first reflective surface M1 and the second reflective surface M2, the surface apex interval between the second reflective surface M2 and the third reflective surface M3 and the surface apex interval between the third reflective surface M3 and the fourth reflective surface M4 is 2.0 or less. TABLE 11 MIRROR NO. RADIUS OF CURVATURE SURFACE INTERVAL M (MASK) 0 699.837 M1 −702.313 −214.261 APERTURE STOP 0 −111.81 M2 −1439.7 220.059 M3 697.033 −284.029 M4 614.085 878.59 M5 317.899 −372.549 M6 450.292 415.949 W (WAFER) 0 0 ASPHERIC COEFICIENT K A B C D E F G M1 −1.68182 9.55118E−10 −2.11336E−14 5.23131E−19 −2.80887E−23 2.18057E−27 −1.10436E−31 2.38501E−36 M2 10.2585 −2.23025E−09 7.71679E−14 −9.73737E−18 2.12343E−21 1.07361E−25 −1.30154E−28 1.62064E−32 M3 0.945906 −2.28616E−09 −8.97921E−14 1.22418E−17 −9.43003E−22 4.40866E−26 −1.15116E−30 1.28816E−35 M4 −0.01009 7.43259E−11 −2.23280E−15 2.05738E−20 2.01255E−26 −2.37660E−30 2.03987E−35 −5.83160E−41 M5 0.248075 −4.75145E−10 1.23412E−12 −5.43969E−17 1.55145E−20 −6.34084E−24 1.52607E−27 −1.37322E−31 M6 0.036824 3.42326E−11 2.29726E−16 2.03348E−21 −7.23005E−26 5.58887E−30 −1.95238E−34 2.71649E−39

Here, the condition's values of the projection optical elements of each embodiment are briefly shown in Table 8 about the projection optical Systems of the first to seventh embodiments. Referring Table 8, the above condition is met. The unit of Rsto, Rsto/NA, TT, SCA2 to SCA4 or SCA2 to SCA4/NA is [mm]. Of course, the unit may be [cm], [inch], [m] and [μm]. In addition, a value divided the above SCA2 to SCA4/NA by the overall length TT is defined. SCA2 to SCA4/NA/TT is preferably a value that is larger than 0.0600 and smaller than 0.0825 and is more preferably a value that is larger than 0.062 and smaller than 0.082. SCA2/NA/TT is preferably a value that is larger than 0.078 and smaller than 0.0825 and is more preferably a value that is larger than 0.080 and smaller than 0.0820. SCA3/NA/TT is preferably a value that is larger than 0.0600 and smaller than 0.0660 and is more preferably a value that is larger than 0.0630 and smaller than 0.0650. SCA4/NA/TT is preferably a value that is larger than 0.0630 and smaller than 0.0780 and is more preferably a value that is larger than 0.0720 and smaller than 0.0775. TABLE 8 SEVENTH EIGHTH NINTH TENTH ELEVENTH TWELFTH THIRTEENTH EMBODIMENT EMBODIMENT EMBODIMENT EMBODIMENT EMBODIMENT EMBODIMENT EMBODIMENT Retro(mm) 32.5000 31.2300 30.400 34.1600 37.5300 39.5000 33.6500 NA 0.2500 0.2370 0.2300 0.2800 0.3000 0.3200 0.2600 TT(mm) 1252.3840 1267.0480 1265.5130 1197.8000 1217.0300 1177.1300 1231.8000 Reto/NA(mm) 130.0000 131.7722 132.1738 122.0000 125.1000 123.4375 129.4231 Reto/NA/TT 0.1038 0.1040 0.1042 0.1019 0.1028 0.1049 0.1051 SCA2(mm) 25.2300 24.4550 23.9300 26.4460 28.8450 30.8700 26.0550 SCA2/NA(mm) 100.9200 103.1857 104.0435 94.4484 96.1500 95.8438 100.2116 SCA2/NA/TT 0.0806 0.0814 0.0820 0.0788 0.0790 0.0814 0.0814 SCA3(mm) 19.8000 19.4900 19.1350 20.2800 22.9900 23.9700 20.6750 SCA3/NA(mm) 79.2000 82.2363 83.1957 72.2800 76.6333 74.9063 79.5192 SCA3/NA/TT 0.0632 0.0649 0.0656 0.0805 0.0630 0.0636 0.0646 SCA4(mm) 22.5700 22.7550 22.5000 21.2150 24.5200 25.0950 23.7450 SCA4/NA(mm) 90.2800 96.0127 97.8261 75.7679 81.7333 78.4219 91.3289 SCA4/NA/TT 0.0721 0.0758 0.0771 0.0633 0.0672 0.0666 0.0741

Eighth Embodiment

A description will now be given of an exposure apparatus 200 that includes the projection optical system 100 to 100F, with reference to FIG. 8. Here, FIG. 8 is a schematic block diagram of the exposure apparatus 200.

The exposure apparatus 200 uses EUV light (with a wavelength, for example, of 13.5 nm) as illumination light for exposure, and exposes onto the plate 240 a circuit pattern created on a mask 220, for example, in a step-and-scan manner or step-and-repeat manner. This exposure apparatus is suitable for a lithography process less than submicron or quarter micron, and the present embodiment uses the step-and-scan exposure apparatus (also referred to as a “scanner”) as an example. The “step-and-scan manner”, as used herein, is an exposure method that exposes a mask pattern onto a wafer by continuously scanning the wafer relative to the mask, and by moving, after a shot of exposure, the wafer stepwise to the next exposure area to be shot. The “step-and-repeat manner” is another mode of exposure method that moves a wafer stepwise to an exposure area for the next shot every shot of cell projection onto the wafer.

Referring to FIG. 8, the exposure apparatus 200 includes an illumination apparatus 210 for illuminating the mask 220 using the light from a light source, a mask stage 225 that supports the mask 220, a projection optical system 230 (100, or the like) for introducing the light from the mask 220 into an object 240 to be exposed, a wafer stage 245 that supports the object 240, an alignment detection mechanism 250, and a focus position detection mechanism 260. Although FIG. 8 shows a four-mirror catoptric projection optical system from the mask to the object (wafer) for simplicity purposes, the number of reflective surfaces in the catoptric projection optical system is preferably six as in the above first to thirteenth embodiments. Of course, the number of mirrors is variable within a scope of the present invention.

At least the optical path through which the EUV light travels is preferably be maintained in a vacuum atmosphere VC, although not shown in FIG. 8, since the EUV light has low transmittance for air and the residue gas (such as polymer organic gas) causes contaminations.

The illumination apparatus 210 uses the EUV light of an arc shape corresponding to an arc field of the projection optical system 230 to illuminate the mask 220, and includes an EUV light source 212 and an illumination optical system 214.

The EUV light source 210 uses, for example, a laser plasma light source. The laser plasma light source irradiates a highly intensified pulse laser beam to a target material put in vacuum, thus generating high-temperature plasma for use as EUV light with a wavelength of about 13 nm emitted from this. The target material may use a metallic thin film, inert gas, and droplets, etc. The pulse laser preferably has high repetitive frequency, e.g., usually several kHz, for increased average intensity of the emitted EUV light.

The illumination optical system 214 includes a condenser mirror 214 a, and an optical integrator 214 b. The condenser mirror 214 a serves to collect the EUV light that is isotropically irradiated from the laser plasma. The optical integrator 214 b serves to uniformly illuminate the mask 220 with a predetermined NA. The illumination optical system 214 further includes an aperture 214 c to limit an illumination area to an arc shape at a position conjugate with the mask 220. The illumination optical system 214 may further include a cooling apparatus for cooling the optical elements, such as the condenser mirror 214 a and the optical integrator 214 b. The cooling apparatus cools the condenser mirror 214 a and optical integrator 214 b, and prevents deformation due to the thermal expansion for excellent imaging performance.

The mask 220 is a reflection mask that forms a circuit pattern or image to be transferred, and supported and driven by the mask stage 225. The diffracted light from the mask 220 is reflected by the projection optical system 230 (100 etc.) discussed in the first to sixth embodiments and projected onto the object 240. The mask 220 and the object 240 are arranged optically conjugate with each other. The exposure apparatus 200 is a step-and-scan exposure apparatus, and projects a reduced size of the pattern on the mask 220 on the object 240 by scanning the mask 220 and the object 240.

The mask stage 225 supports the mask 220 and is connected to a moving mechanism (not shown). The mask stage 225 may use any structure known in the art. A moving mechanism (not shown) may include a linear motor etc., and drives the mask stage 225 at least in an X direction and moves the mask 220. The exposure apparatus 200 synchronously scans the mask 220 or the object 240.

The projection optical system 230 uses the above projection optical system 100. The projection optical system 230 uses plural multilayer mirrors 230 a to project a reduced size of a pattern formed on the mask 220 onto the object 240. The number of mirrors 230 a is six or more. For wide exposure area with the small number of mirrors, the mask 220 and object 240 are simultaneously scanned to transfer a wide area that is an arc-shaped area or ring field apart from the optical axis by a predetermined distance. The projection optical system 230 has a NA of about 0.2 to 0.3. A cooling apparatus can cool an optical element in the projection optical system 230 such as the mirror 230 a. The cooling apparatus cools the mirror 230 a, and prevents deformation due to the thermal expansion for excellent imaging performance.

The instant embodiment uses a wafer as the object 240 to be exposed, but it may include a liquid crystal plate and a wide range of other objects to be exposed. A photoresist is applied onto the object 240.

The wafer stage 245 holds the object 240 by a wafer chuck 245 a. The wafer stage 245 moves the object 240, for example, using a linear stage in XYZ directions. The mask 220 and the object 240 are synchronously scanned. The positions of the mask stage 225 and wafer stage 245 are monitored, for example, by a laser interferometer, and driven at a constant speed ratio.

The alignment detection mechanism 250 measures a positional relationship between the position of the mask 220 and the optical axis of the projection optical system 230, and a positional relationship between the position of the object 240 and the optical axis of the projection optical system 230, and sets positions and angles of the mask stage 225 and the wafer stage 245 so that a projected image of the mask 220 may be positioned in place on the object 240.

A focus position detection mechanism 260 measures a focus position on the object 240 surface, and its control over positions and angles of the wafer stage 245 always maintain the object 240 surface at an imaging position of the projection optical system 230 during exposure.

In exposure, the EUV light emitted from the illumination apparatus 210 illuminates the mask 220, and images a pattern formed on the mask 220 onto the object 240 surface. The instant embodiment uses an arc or ring shaped image surface, scans the mask 220 and object 240 at a speed ratio corresponding to a reduction ratio to expose the entire surface of the mask 220. The projection optical system 230 (100) can achieve higher NA and higher throughput with small space structure, and realize the desired resolution (for example, 32 nm node).

Referring to FIGS. 9 and 10, a description will now be given of an embodiment of a device fabricating method using the above exposure apparatus 200. FIG. 9 is a flowchart for explaining a fabrication of devices (i.e., semiconductor chips such as IC and LSI, LCDs, CCDs, etc.). Here, a description will be given of a fabrication of a semiconductor chip as an example. Step 1 (circuit design) designs a semiconductor device circuit. Step 2 (mask fabrication) forms a mask having a designed circuit pattern. Step 3 (wafer preparation) manufactures a wafer using materials such as silicon. Step 4 (wafer process), which is referred to as a pretreatment, forms actual circuitry on the wafer through photolithography using the mask and wafer. Step 5 (assembly), which is also referred to as a posttreatment, forms into a semiconductor chip the wafer formed in Step 4 and includes an assembly step (e.g., dicing, bonding), a packaging step (chip sealing), and the like. Step 6 (inspection) performs various tests for the semiconductor device made in Step 5, such as a validity test and a durability test. Through these steps, a semiconductor device is finished and shipped (Step 7).

FIG. 10 is a detailed flowchart of the wafer process in Step 4. Step 11 (oxidation) oxidizes the wafer's surface. Step 12 (CVD) forms an insulating film on the wafer's surface. Step 13 (electrode formation) forms electrodes on the wafer by vapor disposition and the like. Step 14 (ion implantation) implants ions into the wafer. Step 15 (resist process) applies a photosensitive material onto the wafer. Step 16 (exposure) uses the exposure apparatus 200 to expose a circuit pattern on the mask onto the wafer. Step 17 (development) develops the exposed wafer. Step 18 (etching) etches parts other than a developed resist image. Step 19 (resist stripping) removes disused resist after etching. These steps are repeated, and multilayer circuit patterns are formed on the wafer. The device fabrication method of this embodiment may manufacture higher quality devices than the conventional one. Thus, the device fabrication method using the exposure apparatus 200, and the devices as finished goods also constitute one aspect of the present invention.

Further, the present invention is not limited to these preferred embodiments, and various variations and modifications may be made without departing from the scope of the present invention.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 is an optical path view of a first embodiment of the present invention.

FIG. 2 is an optical path view of a second embodiment of the present invention.

FIG. 3 is an optical path view of a third embodiment of the present invention.

FIG. 4 is an optical path view of a fourth embodiment of the present invention.

FIG. 5 is an optical path view of a fifth embodiment of the present invention.

FIG. 6 is an optical path view of a sixth embodiment of the present invention.

FIG. 7 is an optical path view of a seventh embodiment of the present invention.

FIG. 8 is a schematic block diagram of an exposure apparatus of one aspect according to the present invention.

FIG. 9 is a flowchart for explaining a method for fabricating devices (semiconductor chips such as ICs, LSIs, and the like, LCDs, CCDs, etc.).

FIG. 10 is a detailed flowchart for Step 4 of wafer process shown in FIG. 9.

FIG. 11 is a view for explaining an incident angle of light.

FIG. 12 is a view for explaining a spread radius of an irradiation area formed by light from a center of an arc illumination area of an object surface on a second to fourth reflective surface.

FIG. 13 is an optical path view of the projection optical system of one aspect according to the present invention.

DESCRIPTION OF NUMERALS

-   M1 to M6 FIRST TO FIFTH REFLECTIVE SURFACE -   AS APERTURE STOP -   IM INTERMEDIATE IMAGE -   AX OPTICAL AXIS -   MS OBJECT SURFACE -   W IMAGE SURFACE 

1. A projection optical system for projecting a pattern on an object surface onto an image surface in a reduced size, said projection optical system comprising six reflective surfaces that include, in order of reflecting light from the object surface, a first reflective surface, a second convex reflective surface, a third convex reflective surface, a fourth reflective surface, a fifth reflective surface and a sixth reflective surface, and an aperture stop along an optical path between the first and second reflective surfaces.
 2. A projection optical system according to claim 1, wherein the first reflective surface has a concave shape.
 3. A projection optical system according to claim 1, wherein the fourth reflective surface has a concave shape.
 4. A projection optical system according to claim 1, wherein an intermediate image is formed along the optical path from the fourth reflective surface to the fifth reflective surface.
 5. A projection optical system according to claim 1, wherein 25°<θ_(max)+Δθ<35° is met, where θ_(max) is a maximum incident angle on one of the six reflective surfaces, and Δθ is an incident angle distribution width on the one of the six reflective surfaces, said one having the largest maximum value of a light incident angle.
 6. A projection optical system according to claim 5, wherein θ_(max)+Δθ<32° is met.
 7. A projection optical system according to claim 1, wherein a maximum incident angle at each point on a nodal line has an extreme in a region between Lmin+0.3×(Lmax−Lmin) and Lmax on the nodal line, the nodal line being formed between a light incident area upon which the light from an arc illuminated area on the object surface is incident, and a plane that includes a center point of a chord of the arc illuminated area shape on the object surface and an optical axis, the light incident area being located on one of the six reflective surfaces, which one has the largest maximum value of a light incident angle, where Lmin is a minimum value of a distance from the optical axis to each point on the nodal line, and Lmax is a maximum value of the distance from the optical axis to each point on the nodal line.
 8. A projection optical system according to claim 1, wherein one of the six reflective surfaces, which one has the largest maximum value of a light incident angle, has a convex shape for receiving convergent light and reflects divergent light.
 9. A projection optical system according to claim 1, wherein a difference is 30 mm or longer between a maximum distance and a minimum distance between an optical axis and a light incident area on the fourth reflective surface, upon which light emitted from a center of a nodal line is incident, the nodal line being formed between a plane that includes a center of an arc illuminated area on the object surface and the optical axis, and the illuminated area.
 10. A projection optical system according to claim 1, wherein a surface apex is defined, with respect to each of the six reflective surfaces, as one of intersecting points between an optical axis and an approximately spherical surface, which one is closest to a reflection point of the light on each of the six reflective surfaces, the approximately spherical surface having a center that is defined as a center of curvature of each of the six reflective surfaces, and a radius that is defined as a radius of curvature of each of the six reflective surfaces, and wherein the surface apexes of the six reflective surfaces are arranged in order of the fourth reflective surface, the second reflective surface, the third reflective surface, the first reflective surface, the sixth reflective surface and the fifth reflective surface in order from the object surface to the image surface along an optical axis.
 11. A projection optical system according to claim 1, wherein a surface apex is defined, with respect to each of the six reflective surfaces, as one of intersecting points between an optical axis and an approximately spherical surface, which one is closest to a reflection point of the light on each of the six reflective surfaces, the approximately spherical surface having a center that is defined as a center of curvature of each of the six reflective surfaces, and a radius that is defined as a radius of curvature of each of the six reflective surfaces, and wherein a distance is 250 mm or longer between the object surface and one of the surface apexes of the six reflective surfaces, which one is the closest to the object surface among the six reflective surfaces.
 12. A projection optical system according to claim 1, wherein a surface apex is defined, with respect to each of the six reflective surfaces, as one of intersecting points between an optical axis and an approximately spherical surface, which one is closest to a reflection point of the light on each of the six reflective surfaces, the approximately spherical surface having a center that is defined as a center of curvature of each of the six reflective surfaces, and a radius that is defined as a radius of curvature of each of the six reflective surfaces, and wherein La11/200<L24<La11/10 is met, where L24 is an interval between the surface apex of the second reflective surface and the surface apex of the fourth reflective surface, and La11 is a distance between the object surface and the image surface along the optical axis.
 13. A projection optical system according to claim 1, wherein a surface apex is defined, with respect to each of the six reflective surfaces, as one of intersecting points between an optical axis and an approximately spherical surface, which one is closest to a reflection point of the light on each of the six reflective surfaces, the approximately spherical surface having a center that is defined as a center of curvature of each of the six reflective surfaces, and a radius that is defined as a radius of curvature of each of the six reflective surfaces, and wherein La11/20<L6<La11/6 is met, where L6 is an interval between the surface apex of the sixth reflective surface and the surface apex of the reflective surface that is closest to the sixth reflective surface, and La11 is a distance between the object surface and the image surface along the optical axis.
 14. A projection optical system according to claim 1, wherein an absolute value of a radius of curvature of the second reflective surface is 1800 mm or smaller.
 15. A projection optical system according to claim 1, wherein an intermediate image of the pattern on the object surface is formed between two adjacent reflective surfaces along the optical path of the light among the six reflective surfaces, and located apart from each of the two adjacent reflective surfaces by Lim×0.35 or greater, where Lim is an optical path length between the two adjacent reflective surfaces.
 16. A projection optical system according to claim 1, wherein the aperture stop is located between the first and second reflective surfaces, and located apart from each of the first and second reflective surfaces by Lst/10 or greater, where Lst is an optical path length between the first and second reflective surfaces.
 17. A projection optical system according to claim 1, wherein the aperture stop is located on the optical path between the first and second reflective surfaces.
 18. A projection optical system according to claim 1, wherein the six reflective surfaces are located between the object surface and the image surface.
 19. An exposure apparatus comprising: an illumination optical system for illuminating a pattern on an object surface using light from a light source; and a projection optical system according to claim 1 for projecting the pattern on the object surface onto an image surface in a reduced size.
 20. A device fabricating method comprising the steps of: exposing an object using an exposure apparatus; and developing the object that has been exposed, wherein said exposure apparatus includes: an illumination optical system for illuminating a pattern on an object surface using light from a light source; and a projection optical system according to claim 1 for projecting the pattern on the object surface onto an image surface in a reduced size.
 21. A projection optical system for projecting a pattern on an object surface onto an image surface in a reduced size, said projection optical system comprising six reflective surfaces that include, in order of reflecting light from the object surface, a first reflective surface, a second reflective surface, a third reflective surface, a fourth reflective surface, a fifth reflective surface and a sixth reflective surface, wherein intersecting points formed between a principal ray from an object point in a center of an arc illuminated area on the object surface and the first to the fourth reflective surface are respectively defined as a first intersecting point to a fourth intersecting point, in a predetermined plane, wherein said predetermined plane is a plane that includes the center of the arc illuminated area and an optical axis, wherein a value of maximum value/minimum value is 2.2 or less among La1 to La4, where La1 is a distance between a projected image of the object point to the predetermined plane and a projected image of the first intersecting point to the predetermined plane, La2 is a distance between the projected image of the first intersecting point to the predetermined plane and a projected image of the second intersecting point to the predetermined plane, La3 is a distance between the projected image of the second intersecting point to the predetermined plane and a projected image of the third intersecting point to the predetermined plane and La4 is a distance between the projected image of the third intersecting point to the predetermined plan and a projected image of the fourth intersecting point to the predetermined plane, and wherein a surface apex is defined as one of intersecting points formed between the optical axis and an approximately spherical surface, which one is closest to a reflection point of the light, the approximately spherical surface having a center that is defined as a center of curvature of the first to the fourth reflective surface, and a radius that is defined as a radius of curvature of the first to the first to the fourth reflective surface, a value of maximum value/minimum value is 2.0 or less among Lb1 to Lb3, where Lb1 is an interval between the surface apex of the first reflective surface and the surface apex of the second reflective surface, Lb2 is an interval between the surface apex of the second reflective surface and the surface apex of the third reflective surface and Lb3 is an interval between the surface apex of the third reflective surface and the surface apex of the fourth reflective surface.
 22. A projection optical system according to claim 21, wherein said value of maximum value/minimum value is 2.0 or more among La1 to La4.
 23. A projection optical system according to claim 21, wherein said value of maximum value/minimum value is 2.06 or more among La1 to La4.
 24. A projection optical system according to claim 21, wherein said second reflective surface has a convex shape.
 25. A projection optical system according to claim 21, wherein said third reflective surface has a convex shape.
 26. A projection optical system according to claim 21, wherein said first reflective surface has a concave shape.
 27. A projection optical system according to claim 21, wherein said fourth reflective surface has a concave shape.
 28. A projection optical system according to claim 21, wherein an intermediate image is formed along the optical path from the fourth reflective surface to the fifth surface.
 29. A projection optical system for projecting a pattern on an object surface onto an image surface in a reduced size, said projection optical system comprising: six reflective surfaces that include, in order of reflecting light from the object surface, a first reflective surface, a second reflective surface, a third reflective surface, a fourth reflective surface, a fifth reflective surface and a sixth reflective surface; and an aperture stop along an optical path between the first reflective surface and the second reflective surface, wherein 0.52<|r2/TT| and 0.25<|r3/TT|<0.35, where TT is an object-image distance, r2 is a paraxial radius of curvature of the second reflective surface and r3 is a paraxial radius of curvature of the third reflective surface.
 30. A projection optical system according to claim 29, wherein |r2/TT|<0.63.
 31. A projection optical system according to claim 29, wherein 0.26<|r1/TT|<0.29, where r1 is a paraxial radius of curvature of the first reflective surface.
 32. A projection optical system according to claim 29, wherein 0.23<|r4/TT|<0.27, where r4 is a paraxial radius of curvature of the fourth reflective surface.
 33. A projection optical system according to claim 29, wherein 0.11<|r5/TT|<0.14 and 0.17<|r6/TT|<0.2, where r5 is a paraxial radius of curvature of the fifth reflective surface and r6 is a paraxial radius of curvature of the sixth reflective surface.
 34. A projection optical system according to claim 29, wherein said second reflective surface has a convex shape.
 35. A projection optical system according to claim 29, wherein said third reflective surface has a convex shape.
 36. A projection optical system according to claim 29, wherein said first reflective surface has a concave shape.
 37. A projection optical system according to claim 29, wherein said fourth reflective surface has a concave shape.
 38. A projection optical system according to claim 29, wherein an intermediate image is formed along the optical path from the fourth reflective surface and the fifth reflective surface.
 39. An exposure apparatus comprising: an illumination optical system for illuminating a pattern on an object surface using light from a light source; and a projection optical system according to claim 21 for projecting the pattern on the object surface onto an image surface in a reduced size.
 40. An exposure apparatus comprising: an illumination optical system for illuminating a pattern on an object surface using light from a light source; and a projection optical system according to claim 29 for projecting the pattern on the object surface onto an image surface in a reduced size.
 41. A device fabricating method comprising the steps of: exposing an object using an exposure apparatus according to claim 39; and performing a development process for the object exposed.
 42. A device fabricating method comprising the steps of: exposing an object using an exposure apparatus according to claim 40; and performing a development process for the object exposed.
 43. A projection optical system having a numerical aperture NA of 0.23 or more at an image side, said projection optical system for projecting a pattern on an object surface onto an image surface in reduced size, said projection optical system comprising: six reflective surface that includes, in order of reflecting light from the object surface, a first reflective surface, a second reflective surface, a third reflective surface, a fourth reflective surface, a fifth reflective surface and a sixth reflective surface; and an aperture stop along an optical path between the first reflective surface and the second reflective surface, wherein Rsto/NA<135 mm, where Rsto is a radius of the aperture stop.
 44. A projection optical system according to claim 43, wherein said numerical aperture NA at the image side is 0.26 or more.
 45. A projection optical system according to claim 43, wherein said numerical aperture NA at the image side is 0.3 or more.
 46. A projection optical system according to claim 43, wherein Rsto/NA is 100 mm or more.
 47. A projection optical system according to claim 43, wherein Rsto/NA is 120 mm or more.
 48. A projection optical system according to claim 43, wherein Rsto/NA is 125.3 mm or less.
 49. A projection optical system according to claim 43, wherein said second reflective surface has a convex shape.
 50. A projection optical system according to claim 43, wherein said third reflective surface has a convex shape.
 51. A projection optical system according to claim 43, wherein said first reflective surface has a concave shape.
 52. A projection optical system according to claim 43, wherein said fourth reflective surface has a concave shape.
 53. A projection optical system according to claim 43, wherein an intermediate image is formed along the optical path from the fourth reflective surface and the fifth reflective surface.
 54. A projection optical system for projecting a pattern on an object surface onto an image surface in a reduced size, said projection optical system comprising: six reflective surfaces that include, in order of reflecting light from the object surface, a first reflective surface, a second reflective surface, a third reflective surface, a fourth reflective surface, a fifth reflective surface and a sixth reflective surface; and an aperture stop along an optical path between the first reflective surface and the second reflective surface, wherein a spread radius SCA/NA is equal to or larger than 70 mm and is equal to or smaller than 105 mm, where SCA is a half of a length in a direction along a perpendicular bisector of an area, which a light from a center object point of the arc illuminated area on the object surface illuminates the second, third and fourth reflective surface, and NA is a numerical aperture at an image side, wherein said predetermined plane is a plane that includes the center of the arc illuminated area and an optical axis.
 55. A projection optical system according to claim 54, wherein said second reflective surface has a concave shape.
 56. A projection optical system according to claim 54, wherein said third reflective surface has a convex shape.
 57. A projection optical system according to claim 54, wherein said first reflective surface has a concave shape.
 58. A projection optical system according to claim 54, wherein said fourth reflective surface has a concave shape.
 59. A projection optical system according to claim 54, wherein an intermediate image is formed along the optical path from the fourth reflective surface and the fifth reflective surface.
 60. An exposure apparatus comprising: an illumination optical system for illuminating a pattern on an object surface using light from a light source; and a projection optical system according to claim 43 for projecting the pattern on the object surface onto an image surface in a reduced size.
 61. An exposure apparatus comprising: an illumination optical system for illuminating a pattern on an object surface using light from a light source; and a projection optical system according to claim 54 for projecting the pattern on the object surface onto an image surface in a reduced size.
 62. A device fabricating method comprising the steps of: exposing an object using an exposure apparatus according to claim 60; and performing a development process for the object exposed.
 63. A device fabricating method comprising the steps of: exposing an object using an exposure apparatus according to claim 61; and performing a development process for the object exposed. 